参数资料
型号: M68AF031AL70B6E
厂商: 意法半导体
英文描述: 256 Kbit (32K x 8) 5.0V Asynchronous SRAM
中文描述: 256千位(32K的× 8)5.0V异步SRAM
文件页数: 10/22页
文件大小: 383K
代理商: M68AF031AL70B6E
M68AF031A
10/22
OPERATION
The M68AF031A has a Chip Enable power down
feature which invokes an automatic standby mode
whenever Chip Enable is de-asserted (E = High).
An Output Enable (G) signal provides a high
speed tri-state control, allowing fast read/write cy-
cles to be achieved with the common I/O data bus.
Operational modes are determined by device con-
trol inputs W and E, as summarized in the Operat-
ing Modes table (see
Table 6., Operating Modes
).
Table 6. Operating Modes
Note: 1. X = V
IH
or V
IL
.
Read Mode
The M68AF031A is in the Read mode whenever
Write Enable (W) is High with Output Enable (G)
Low, and Chip Enable (E) is asserted. This pro-
vides access to data of the 262,144 locations in
the static memory array, specified by the 15 ad-
dress inputs. Valid data will be available at the
eight output pins within t
AVQV
after the last stable
address, providing G is Low and E is Low. If Chip
Enable or Output Enable access times are not
met, data access will be measured from the limit-
ing parameter (t
ELQV
or t
GLQV
) rather than the ad-
dress. Data out may be indeterminate at t
ELQX
and
t
GLQX
but data lines will always be valid at t
AVQV
.
Figure 10. Address Controlled, Read Mode AC Waveforms
Note: E = Low, G = Low, W = High.
Operation
E
W
G
DQ0-DQ7
Power
Deselected
V
IH
X
X
Hi-Z
Standby (I
SB
)
Read
V
IL
V
IH
V
IL
Data Output
Active (I
CC
)
Write
V
IL
V
IL
X
Data Input
Active (I
CC
)
Output Disabled
V
IL
V
IH
V
IH
Hi-Z
Active (I
CC
)
AI05939
tAVAV
tAVQV
tAXQX
A0-A14
DQ0-DQ7
VALID
DATA VALID
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