参数资料
型号: M68AF031AL70MS6F
厂商: 意法半导体
英文描述: 256 Kbit (32K x 8) 5.0V Asynchronous SRAM
中文描述: 256千位(32K的× 8)5.0V异步SRAM
文件页数: 8/22页
文件大小: 383K
代理商: M68AF031AL70MS6F
M68AF031A
8/22
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, as well as the DC and AC
characteristics of the device. The parameters in
the following DC and AC Characteristic tables are
derived from tests performed under the Measure-
ment Conditions listed in the relevant tables. De-
signers should check that the operating conditions
in their projects match the measurement condi-
tions when using the quoted parameters.
Table 3. Operating and AC Measurement Conditions
Figure 8. AC Measurement I/O Waveform
Figure 9. AC Measurement Load Circuit
Parameter
M68AF031A
V
CC
Supply Voltage
4.5 to 5.5V
Ambient Operating Temperature
Range 1
0 to 70°C
Range 6
–40 to 85°C
Load Capacitance (C
L
)
100pF
Output Circuit Protection Resistance (R
1
)
3.0k
Load Resistance (R
2
)
3.1k
Input and Output Timing Ref. Voltages
V
CC
/2
Input Rise and Fall Times
1ns/V
Input Pulse Voltages
0 to V
CC
Output Transition Timing Ref. Voltages
V
RL
= 0.3V
CC
; V
RH
= 0.7V
CC
AI05831
VCC
I/O Timing Reference Voltage
0V
VCC/2
VCC
Output Timing Reference Voltage
0V
0.7VCC
0.3VCC
AI05932
VCC
OUT
CL includes probe capacitance
DEVICE
UNDER
TEST
CL
R1
R2
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相关代理商/技术参数
参数描述
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M68AF031AL70MS6U 制造商:STMicroelectronics 功能描述:
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M68AF031AL70N1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256 Kbit (32K x 8) 5.0V Asynchronous SRAM