参数资料
型号: M68AW127BL70NK1T
厂商: 意法半导体
英文描述: Thick Film Resistor Network; Series:RNA4A; Resistance:1kohm; Resistance Tolerance:+/- 5 %; Power Rating:0.063W; Voltage Rating:25V; Temperature Coefficient:+/-250 ppm; Package/Case:10-SOIC; Network Circuit Type:Dual Termination
中文描述: 1Mbit的128K的× 8,3.0V异步SRAM
文件页数: 1/20页
文件大小: 327K
代理商: M68AW127BL70NK1T
1/20
August 2003
M68AW127B
1Mbit (128K x8), 3.0V Asynchronous SRAM
FEATURES SUMMARY
I
SUPPLY VOLTAGE: 2.7 to 3.6V
I
128K x 8 bits SRAM with OUTPUT ENABLE
I
EQUAL CYCLE and ACCESS TIMES: 70ns
I
LOW STANDBY CURRENT
I
LOW V
CC
DATA RETENTION: 1.5V
I
TRI-STATE COMMON I/O
I
LOW ACTIVE and STANDBY POWER
Figure 1. Packages
SO32 (MC)
TSOP32
8 x 20 mm
(N)
TSOP32
8 x 13.4 mm
(NK)
相关PDF资料
PDF描述
M68AW127BM70NK1T RES NET C-ARRY 10K 5% BUS
M68AW127BL10NK1T Thick Film Resistor Network; Series:RNA4A; Resistance:10kohm; Resistance Tolerance:+/- 5 %; Power Rating:0.063W; Temperature Coefficient:+/-250 ppm; Package/Case:10-SOIC; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
M68AW127BM10NK1T Thick Film Resistor Network; Series:RNA4A; Resistance:100kohm; Resistance Tolerance:+/- 5 %; Power Rating:0.063W; Voltage Rating:25V; Temperature Coefficient:+/-250 ppm; Package/Case:10-SOIC; Network Circuit Type:Dual Termination
M68AW127BL70NK6T 1Mbit 128K x8, 3.0V Asynchronous SRAM
M68AW127BM70NK6T 1Mbit 128K x8, 3.0V Asynchronous SRAM
相关代理商/技术参数
参数描述
M68AW127BL70NK6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1Mbit 128K x8, 3.0V Asynchronous SRAM
M68AW127BM10MC1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1Mbit 128K x8, 3.0V Asynchronous SRAM
M68AW127BM10MC6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1Mbit 128K x8, 3.0V Asynchronous SRAM
M68AW127BM10N1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1Mbit 128K x8, 3.0V Asynchronous SRAM
M68AW127BM10N6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1Mbit 128K x8, 3.0V Asynchronous SRAM