- 您现在的位置：买卖IC网 > PDF目录359089 > M68AW128ML55ZB6T (意法半导体) 2 Mbit (128K x16) 3.0V Asynchronous SRAM PDF资料下载
参数资料
| 型号： | M68AW128ML55ZB6T |
| 厂商： | 意法半导体 |
| 英文描述： | 2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 2兆位（128K的× 16）3.0V异步SRAM |
| 文件页数： | 9/22页 |
| 文件大小： | 335K |
| 代理商： | M68AW128ML55ZB6T |
9/22
M68AW128M
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for periods greater than 1s periods may
affect device reliability. Refer also to the STMicro-
electronics SURE Program and other relevant
quality documents.
Table 3. Absolute Maximum Ratings
Note: 1. One output at time not to exceed 1 second duration.
2. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
3. Up to a maximum operating V
CC
of 3.6V only.
Symbol
Parameter
Value
Unit
I
O
(1)
Output Current
20
mA
P
D
Power Dissipation
1
W
T
A
Ambient Operating Temperature
–55 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
T
LEAD
Lead Temperature during Soldering
(2)
°C
V
CC
Supply Voltage
–0.5 to 4.6
V
V
IO (3)
Input or Output Voltage
–0.5 to V
CC
+0.5
V
相关PDF资料 |
PDF描述 |
|---|---|
| M68AW128ML70ND1 | 2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| M68AW128ML70ND1E | 2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| M68AW128ML70ND1F | 2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| M68AW128ML70ND1T | 2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| M68AW128ML70ND6 | LAMP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M68AW128ML70ND1 | 功能描述:静态随机存取存储器 2M (128Kx16) 70ns RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| M68AW128ML70ND1E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| M68AW128ML70ND1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| M68AW128ML70ND1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| M68AW128ML70ND6 | 功能描述:静态随机存取存储器 2 MBIT(128K X16)静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。