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参数资料
| 型号： | M68AW128ML70ZB6 |
| 厂商： | 意法半导体 |
| 英文描述： | 2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 2兆位（128K的× 16）3.0V异步SRAM |
| 文件页数： | 11/22页 |
| 文件大小： | 335K |
| 代理商： | M68AW128ML70ZB6 |
11/22
M68AW128M
Table 5. Capacitance
Note: 1. Sampled only, not 100% tested.
2. At T
A
= 25°C, f = 1 MHz, V
CC
= 3.0V.
Table 6. DC Characteristics
Note: 1. Average AC current, cycling at t
AVAV
minimum.
2. E = V
IL
, LB OR/AND UB = V
IL
, V
IN
= V
IL
OR V
IH
.
3. E
≤
0.2V, LB OR/AND UB
≤
0.2V, V
IN
≤
0.2V OR V
IN
≥
V
CC
–0.2V.
4. Output disabled.
Symbol
Parameter
(1,2)
Test
Condition
Min
Max
Unit
C
IN
Input Capacitance on all pins (except DQ)
V
IN
= 0V
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
10
pF
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
CC1 (1,2)
Operating Supply Current
V
CC
= 3.6V, f = 1/t
AVAV
,
I
OUT
= 0mA
70ns
20
mA
55ns
26
mA
I
CC2 (3)
Operating Supply Current
V
CC
= 3.6V, f = 1MHz,
I
OUT
= 0mA
2
mA
I
SB
Standby Supply Current CMOS
V
CC
= 3.6V, f = 0,
E
≥
V
CC
–0.2V or
LB=UB
≥
V
CC
–0.2V
5
10
μA
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
–1
1
μA
I
LO (4)
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
–1
1
μA
V
IH
Input High Voltage
2.2
V
CC
+ 0.3
V
V
IL
Input Low Voltage
–0.3
0.6
V
V
OH
Output High Voltage
I
OH
= –1.0mA
2.4
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
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相关代理商/技术参数 |
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| M68AW128ML70ZB6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit (128K x16) 3.0V Asynchronous SRAM |
| M68AW128ML70ZB6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mbit (128K x16) 3.0V Asynchronous SRAM |
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| M68AW256DL | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256DL55ND1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
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