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参数资料
| 型号： | M68AW256MN55ND1E |
| 厂商： | 意法半导体 |
| 英文描述： | 4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| 中文描述： | 4兆位（256K × 16）3.0V异步SRAM |
| 文件页数： | 9/23页 |
| 文件大小： | 152K |
| 代理商： | M68AW256MN55ND1E |
9/23
M68AW256M
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 3. Absolute Maximum Ratings
Note: 1. One output at a time, not to exceed 1 second duration.
2. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assermbly), the ST ECOPACK
7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.
3. Not exceeding 250°C for more than 30s, and peaking at 260°C.
4. Up to a maximum operating V
CC
of 3.6V only.
Symbol
Parameter
Value
Unit
I
O (1)
Output Current
20
mA
T
A
Ambient Operating Temperature
–55 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
T
LEAD
Lead Temperature during Soldering
(2)
260
(3)
°C
V
CC
Supply Voltage
–0.5 to 4.6
V
V
IO (4)
Input or Output Voltage
–0.5 to V
CC
+0.5
V
P
D
Power Dissipation
1
W
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相关代理商/技术参数 |
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| M68AW256MN55ND1F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ND1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ND6 | 制造商:STMicroelectronics 功能描述: |
| M68AW256MN55ND6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
| M68AW256MN55ND6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit (256K x16) 3.0V Asynchronous SRAM |
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