参数资料
型号: M74HCT08RM13TR
厂商: 意法半导体
英文描述: QUAD 2-INPUT AND GATE
中文描述: 四2输入与门
文件页数: 3/8页
文件大小: 170K
代理商: M74HCT08RM13TR
M74HCT08
3/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
CAPACITIVE CHARACTERISTICS
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per gate)
Symbol
Parameter
Test Condition
Value
Unit
VCC
(V)
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
VIH
High Level Input
Voltage
4.5
to
5.5
2.0
V
VIL
Low Level Input
Voltage
4.5
to
5.5
0.8
V
VOH
High Level Output
Voltage
4.5
IO=-20 A
4.4
4.5
4.4
V
IO=-4.0 mA
4.18
4.31
4.13
4.10
VOL
Low Level Output
Voltage
4.5
IO=20 A
0.0
0.1
V
IO=4.0 mA
0.17
0.26
0.33
0.40
II
Input Leakage
Current
5.5
VI = VCC or GND
± 0.1
± 1
A
ICC
Quiescent Supply
Current
5.5
VI = VCC or GND
110
20
A
I
CC
Additional Worst
Case Supply
Current
5.5
Per Input pin
VI = 0.5V or
VI = 2.4V
Other Inputs at
VCC or GND
IO = 0
2.0
2.9
3.0
mA
Symbol
Parameter
Test Condition
Value
Unit
VCC
(V)
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
tTLH tTHL Output Transition
Time
4.5
8
151922
ns
tPLH tPHL Propagation Delay
Time
4.5
13
21
26
32
ns
Symbol
Parameter
Test Condition
Value
Unit
VCC
(V)
TA = 25°C
-40 to 85°C
-55 to 125°C
Min.
Typ.
Max.
Min.
Max.
Min.
Max.
CIN
Input Capacitance
5
101010
pF
CPD
Power Dissipation
Capacitance (note
1)
38
pF
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