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参数资料
| 型号： | M8050-TO-92 |
| 厂商： | 江苏长电科技股份有限公司 |
| 英文描述： | TRANSISTOR （ NPN ） |
| 中文描述： | 晶体管（NPN）的 |
| 文件页数： | 1/3页 |
| 文件大小： | 249K |
| 代理商： | M8050-TO-92 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8050
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 0.625 W
Collector current
I
CM
: 1 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A
I
E
=0
40
V
Collector-emitter breakdown voltage
V(BR)
CEO
*
I
C
= 0.1mA , I
B
=0
25
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A
I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
= 35V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
= 20V , I
B
=0
0.1
A
h
FE(1)
V
CE
=1V, I
C
=5mA
45
h
FE(2)
V
CE
=1V, I
C
=100mA
80
300
DC current gain
h
FE 3
V
CE
=1V, I
C
=800mA
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 800mA, I
B
=80mA
0.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=800mA, I
B
= 80mA
1.2
V
Transition frequency
f
T
V
CE
=6V, I
C
= 20mA , f=30MHz
150
MHz
* Pulse Test
pulse width
300μs
duty cycle
2%
1
2
3
TO
92
1.EMITTER
2. BASE
3. COLLECTOR
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