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参数资料
| 型号： | M93C-76WDS7P |
| 厂商： | 意法半导体 |
| 英文描述： | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| 中文描述： | 16Kbit，8Kbit，4Kbit，2Kbit和1Kbit（8位或16位宽）MICROWIRE串行EEPROM的访问 |
| 文件页数： | 10/31页 |
| 文件大小： | 182K |
| 代理商： | M93C-76WDS7P |
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M93C86, M93C76, M93C66, M93C56, M93C46
10/31
Erase
The Erase Byte or Word (ERASE) instruction sets
the bits of the addressed memory byte (or word) to
1. Once the address has been correctly decoded,
the falling edge of the Chip Select Input (S) starts
the self-timed Erase cycle. The completion of the
cycle can be detected by monitoring the Ready/
Busy line, as described in the
READY/BUSY STA-
TUS
section.
Write
For the Write Data to Memory (WRITE) instruction,
8 or 16 data bits follow the op-code and address
bits. These form the byte or word that is to be writ-
ten. As with the other bits, Serial Data Input (D) is
sampled on the rising edge of Serial Clock (C).
After the last data bit has been sampled, the Chip
Select Input (S) must be taken Low before the next
rising edge of Serial Clock (C). f Chip Select Input
(S) is brought Low before or after this specific time
frame, the self-timed programming cycle will not
be started, and the addressed location will not be
programmed. The completion of the cycle can be
detected by monitoring the Ready/Busy line, as
described later in this document.
Once the Write cycle has been started, it is inter-
nally self-timed (the external clock signal on Serial
Clock (C) may be stopped or left running after the
start of a Write cycle). The cycle is automatically
preceded by an Erase cycle, so it is unnecessary
to execute an explicit erase instruction before a
Write Data to Memory (WRITE) instruction.
Figure 5. ERASE, ERAL Sequences
Note: For the meanings of An and Xn, please see
Table 5.
,
Table 6.
and
Table 7.
.
AI00879B
S
ERASE
1 1
D
Q
ADDR
OP
CODE
1
BUSY
READY
CHECK
STATUS
S
ERASE
ALL
1
0
D
Q
OP
CODE
1
BUSY
READY
CHECK
STATUS
0
0
An
A0
Xn X0
ADDR
相关PDF资料 |
PDF描述 |
|---|---|
| M93C-76WMN6P | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-86MB6P | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-86MB7TG | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-86RBN6 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-86RBN7P | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M93C76-WMN3TP/S | 制造商:STMicroelectronics 功能描述:EEPROM Serial-Microwire 8K-bit 1K x 8/512 x 16 3.3V/5V 8-Pin SO N T/R |
| M93C76-WMN6 | 功能描述:电可擦除可编程只读存储器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93C-76WMN6P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C76-WMN6P | 功能描述:电可擦除可编程只读存储器 16 Kbit 8 Kbit 4Kbit 2 Kbit and 1 Kbit RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93C76-WMN6T | 功能描述:电可擦除可编程只读存储器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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