参数资料
型号: MA2YF80
厂商: PANASONIC CORP
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.2 A, 800 V, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT, MINI2-F1, 2 PIN
文件页数: 1/2页
文件大小: 376K
代理商: MA2YF80
Fast Recovery Diodes (FRD)
Publication date: October 2006
SKJ00016CED
1
This product complies with RoHS Directive (EU 2002/95/EC).
MA2YF80
Silicon epitaxial planar type
For high speed switching circuits
For strobe light circuits (high voltage rectication)
Features
High repetitive peak reverse voltage VRRM
Short reverse recovery time trr
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
800
V
Non-repetitive peak reverse surge voltage
VRSM
800
V
Forward current
IF
200
mA
Non-repetitive peak forward surge current *
IFSM
1
A
Junction temperature
Tj
–40 to +150
°
C
Storage temperature
Tstg
–40 to +150
°
C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 200 mA
2.5
V
Reverse current
IRRM1
VRRM = 400 V
1
A
IRRM2
VRRM = 800 V
20
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
2
pF
Reverse recovery time *
trr
IF = 100 mA, IR = 200 mA
Irr = 20 mA, RL = 100
20
45
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
tp = 2 s
tr = 0.35 ns
δ =
0.05
IF = IR = 100 mA
RL = 100
10%
Input Pulse
Output Pulse
Irr = 0.1 × IR
tr
tp
trr
VR
IF
t
A
Unit: mm
1: Anode
2: Cathode
Mini2-F1 Package
1.6±0.1
1
2
0.80±0.05
0.55±0.1
0.16+0.1
–0.06
3.
5
±0.
1
2.
6
±0.
1
0.45±0.1
5
°
0 to 0.1
0to
0.
3
0to
0.
1
Marking Symbol: HB
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
MA3ZD120G SILICON, VHF BAND, MIXER DIODE
MA4E1340B1-1146T SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE
MA4E1340E1-1068T SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE
MA4E1340A-1146T SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE
MA4P274 100 V, SILICON, PIN DIODE
相关代理商/技术参数
参数描述
MA2Z001 制造商:Panasonic Industrial Company 功能描述:DIODE
MA2Z00100L 功能描述:DIODE SWITCH 200V 100MA SMINI2P RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)(最大):50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)(最大):1.4V @ 6A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座,接线柱安装 封装/外壳:DO-203AA,DO-4,接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879
MA2Z0010GL 功能描述:DIODE SWITCH 200V 100MA SMINI2P RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)(最大):50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)(最大):1.4V @ 6A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座,接线柱安装 封装/外壳:DO-203AA,DO-4,接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879
MA2Z0300AL 功能描述:DIODE VARISTOR 6V 150MA SMINI RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)(最大):50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)(最大):1.4V @ 6A 速度:快速恢复 = 200mA(Io) 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座,接线柱安装 封装/外壳:DO-203AA,DO-4,接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879
MA2Z077 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type