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参数资料
| 型号： | MA3SE020G |
| 厂商： | PANASONIC CORP |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, HF BAND, MIXER DIODE |
| 封装： | ROHS COMPLIANT, SSMINI3-F3, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 196K |
| 代理商： | MA3SE020G |
Schottky Barrier Diodes (SBD)
1
Publication date: October 2007
SKH00213AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3SE020G
Silicon epitaxial planar type
For cellular phone
■ Features
High-frequency wave detection is possible
Low forward voltage V
F
Small terminal capacitance C
t
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF1
IF = 1 mA
0.40
V
VF2
IF
= 35 mA
1.0
Reverse current
IR
VR = 15 V
200
nA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
1.2
pF
Forward dynamic resistance
rf
IF
= 5 mA
9
Parameter
Symbol
Rating
Unit
Reverse voltage
VR
20
V
Maximum peak reverse voltage
VRM
20
V
Forward current
Single
IF
35
mA
Series
25
Peak forward
Single
IFM
100
mA
current
Series
70
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
■ Package
Code
SSMini3-F3
Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
■ Marking Symbol: M6B
■ Internal Connection
12
3
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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