参数资料
型号: MA40411-276
元件分类: 射频混频器
英文描述: GALLIUM ARSENIDE, K BAND, MIXER DIODE
文件页数: 1/5页
文件大小: 115K
代理商: MA40411-276
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 (03) 3226-1671
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
1
Specications Subject to Change Without Notice.
V3.00
GaAs Schottky
Mixer Diodes
MA40400 Series
Features
q
Very Low Noise Figure from X through W-Band
q
Low Junction Capacitance
q
Low Series Resistance
q
Wide Range of Available Product
– Packaged Diodes
– Chips
– Beam Leads
– Anti-Parallel Beam Leads
– Bridge Quads
– Ring Quads
– Tees
q
Superior Dynamic Range to Silicon Diodes
q
Minimum Breakdown Voltage is 5 Volts
q
Minimum 5 Gram Beam Strength For Beam Leads
Description
This family of Gallium Arsenide Schottky diodes is
fabricated with noble metal metallization and silicon
nitride passivation to assure good reliability and low
series resistance.
These diodes are designed to give superior noise gure
from X- through W-band. They are available in a wide
range of packages, chip and beam lead congurations.
The beam lead types include single beam leads, tees,
anti-parallel pairs, ring and bridge quads.
These diodes have lower series resistance than equivalent
junction capacitance silicon schottky diodes. This low
series resistance results in superior conversion loss and
noise gure.
The higher reverse voltage and low series resistance of
Gallium Arsenide Bridge Quads make them particularly
attractive for use in AM modulation and/or sampling cir-
cuits for signal processing and frequency generation.
Case Styles
276
272
120
119
1010
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