参数资料
型号: MA45235-31
元件分类: 参考电压二极管
英文描述: S-C BAND, 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
文件页数: 1/5页
文件大小: 339K
代理商: MA45235-31
RA45200 Series
Silicon Abrupt Junction
runing Varactors
30
Description
Fhe MA45200 series of silicon abrupt junction tuning
iaractors has been designed to obtain the highest Q
~ossible.Each- device in this series has a high density
silicon dioxide passivation which results in exceptionally
ow leakage currents and low post tuning drift. These
silicon abrupt junction tuning varactors, which have a high
Q, also exhibit large capacitance changes with bias
oltages. The capacitance change is approximately equal
to the square root of the voltage. The MA45200 series
diodes are available in a number of ceramic packages as
well as in chip form.
Features
U HIGH 0
LOW LEAKAGE
AVAILABLE IN CHIP FORM
AVAILABLE IN CERAMiC PACKAGES
CUSTOM DESIGNS AVAiLABLE
LOW POST TUNING DRIFT
FREQUENCY RANGE VHF
Ku-BAND
CAN BE SCREENED TO TX, TXV
SPECIFICATIONS
Applications
The MA45200 series of silicon tuning diodes is ideally
suited for frequency tuning applications through Ku band.
These devices are designed for use in solid state elec-
tronic tuning of transistor, Gunn and IMPATT oscillators.
相关PDF资料
PDF描述
MA45235-96 S-C BAND, 3.87 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
MA45230-132 C BAND, 1.32 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
MA45275-131 UHF BAND, 11.82 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
MA45290-132 S BAND, 0.82 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
MA47406 SILICON, PIN DIODE
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