参数资料
型号: MA4AGFCP910
元件分类: PIN二极管
英文描述: 50 V, GALLIUM ARSENIDE, PIN DIODE
封装: ROHS COMPLIANT, FLIP CHIP-2
文件页数: 1/6页
文件大小: 123K
代理商: MA4AGFCP910
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
AlGaAs
Flip Chip PIN Diodes
RoHS Compliant
M/A-COM Products
Rev. V4
MA4AGP907
MA4AGFCP910
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is
considering for development. Performance is based on target specifications,
simulated results, and/or prototype measurements. Commitment to develop is not
guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has
under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may
be available. Commitment to produce in volume is not guaranteed.
Features
Low Series Resistance
Ultra Low Capacitance
Millimeter Wave Switching & Cutoff Frequency
2 Nanosecond Switching Speed
Can be Driven by a Buffered TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
RoHS Compliant
Description
M/A-COM's MA4AGP907 and MA4AGFCP910 are
Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN
diodes. These devices are fabricated on OMCVD
epitaxial wafers using a process designed for high
device uniformity and extremely low parasitics. The
diodes exhibit an extremely low RC product, (0.1ps)
and 2-3nS switching characteristics. They are fully
passivated with silicon nitride and have an added
polymer layer for scratch protection. The protective
coating prevents damage to the junction and the
anode air-bridge during handling and assembly.
Applications
The ultra low capacitance of the MA4AGP907 and
MA4AGFCP910 allows their use through millimeter
frequencies for RF switches and switched phase
shifter applications. The diodes are designed for use
in pulsed or CW applications, where single digit nS
switching speed is required. For surface mount
assembly, the low capacitance of these switches
make them ideal for use in microwave multi-throw
switch assemblies, where the series capacitance of
each “off” port adversely loads the input and affects
VSWR.
DIM
INCHES
MM
MIN.
MAX.
MIN.
MAX.
A
0.026
0.027
0.6604
0.6858
B
0.0135
0.0145
0.3429
0.3683
C
0.0065
0.0075
0.1651
0.1905
D
0.0043
0.0053
0.1092
0.1346
E
0.0068
0.0073
0.1727
0.1854
F
0.0182
0.0192
0.4623
0.4877
Parameter
Absolute Maximum
Reverse Voltage
MA4AGP907 -50V
MA4AGFCP910 -75V
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +150°C
Junction Temperature
+175°C
Dissipated Power
( RF & DC )
50mW
Mounting Temperature
+280°C for 10 seconds
C.W. Incident Power
+23 dBm
Absolute Maximum Ratings TAMB = +25°C
(unless otherwise specified)
1. Gold Pads 14M thick.
2. Yellow areas indicate ohmic gold mounting pads.
3. Dimensions A thru F are identical for both devices
Notes:
Chip Dimensions
MA4AGP907 and MA4AGFCP910
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