- 您现在的位置：买卖IC网 > PDF目录81416 > MA4E1338A1-1146T SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE PDF资料下载
参数资料
| 型号： | MA4E1338A1-1146T |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1146, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 120K |
| 代理商： | MA4E1338A1-1146T |
3
Silicon Medium Barrier Schottky Diodes
M/A-COM Products
Rev. V5
MA4E1338 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
the product(s) or information contained herein without notice.
Maximum Ratings @ 25 °C (unless otherwise specified)
1,2
Parameter
Values
Operating Temperature
-55 to +125
Storage Temperature
-55 to +125
Total Power Dissipation
(RF and D.C.)
250
Continuous Forward Current
30
Surge Forward Current, @ t < 10 ms
100
Reverse Voltage
8
Unit
°C
mW
mA
V
Soldering Temperature (Standard Part #)
°C
+235 for 5 sec.
Soldering Temperature (RoHS Compliant Part #)
°C
+260 for 5 sec.
Electrical Specifications @ +25 °C
Parameter
Condition
Symbol
Specification
Forward Voltage
IF = 1 mA
VF
360 mV max.
Delta Forward Voltage
IF = 1 mA
Δ V
F
20 mV max.
(for series pair and unconnected pair
configurations)
Forward Voltage
IF = 10 mA
VF
500 mV max.
Total Capacitance
VR = 0 V
F = 1 MHz
CT
1.0 pF max.
Reverse Leakage Current
VR = 1 V
IR
100 nA max.
Reverse Voltage Breakdown
IR = 10 A
Vb
8 V min.
1. Operation of this device above any one of the Maximum Rated parameters may cause permanent damage.
2. Please refer to Application Note M538 for surface mounting instructions.
相关PDF资料 |
PDF描述 |
|---|---|
| MQ15KP150CTR | 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR |
| MQ15KP160CE3 | 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR |
| MQ15KP170AE3TR | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR |
| MQ15KP260ATR | 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR |
| MQ15KP36CATR | 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E1338A-1141 | 制造商:M/A-COM Technology Solutions 功能描述:SCHOTTKY 8V 0.03A 2PIN SOD-323 - Bulk |
| MA4E1338A-1141T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Silicon Medium Barrier Schottky Diodes |
| MA4E1338A-1146 | 制造商:M/A-COM Technology Solutions 功能描述:SCHOTTKY 8V 0.03A 3PIN SOT-323 - Bulk |
| MA4E1338A-1146T | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E1338A1-287T | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。