参数资料
型号: MA4E2054D-1146T
元件分类: 参考电压二极管
英文描述: SILICON, LOW BARRIER SCHOTTKY, VHF-KU BAND, MIXER DIODE
封装: PLASTIC, CASE 1146, 3 PIN
文件页数: 5/9页
文件大小: 135K
代理商: MA4E2054D-1146T
5
Surface Mount Low Barrier Schottky Diode
M/A-COM Products
Rev. V7
MA4E2054 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
Typical Performance Curves @ 25°C in Chip Form, Mounted on a Microstrip Fixture
Tuned Fixture Noise Figure vs Lo Power at 9.375 GHz
Forward Current vs Forward Voltage
and Temperature
0.01
0.1
1
10
100
1000
10000
-40
-30
-20
-10
0
10
INPUT PO W ER (dBm)
V
OU
T
(m
V
)
- - - - - - 1M oh m
________
100k oh ms
__ __ __
10k ohms
__ . . __ . .
5k oh ms
Detector Output Voltage vs Input Power and Load
Resistance. Diode at Zero Bias. Untuned Fixture at
9.375 GHz (50
Ω)
3
4
5
6
7
8
9
0.01
0.1
1
10
LO PO WER (mW)
N
O
IS
E
F
IG
U
R
E
(
d
B)
0.1
1
10
0
2
4
6
8
10
12
FREQ UENC Y (GHz )
V
OU
T
(m
V
)
- - - - - - 1M ohm
________
100k ohms
__ __ __
10k ohms
__ . . __ . .
5k ohms
Detector Output Voltage vs Frequency and Load
Resistance at -30 dBm. Diode at Zero Bias. Untuned
Fixture.
Detector Output Voltage vs. Frequency and Load
Resistance at -30 dBm. Diode Forward Biased at
20
μA. Untuned Fixture (50Ω)
Detector Output Voltage vs Input Power and Load
Resistance. Diode Forward Biased at 20
μA. Untuned
Fixture at 9.375 GHz.
0.01
0.1
1
10
0
50
100
150
200
250
300
350
400
450
500
V
F (m V)
I F
(m
A
)
+125oC
25oC
-50oC
0.01
0.1
1
10
024
68
10
12
FREQ UENC Y (GHz )
V
OU
T
(m
V
)
- - - - - - 1M oh m
________
100k oh ms
__ __ __
10k oh ms
__ . . __ . .
5k oh ms
0.01
0.1
1
10
100
1000
10000
-50-40
-30-20
-10
0
10
20
INPUT PO W ER (dBm)
V
OU
T
(m
V
)
- - - - - - 10k oh ms
________
1M ohm
__ __ __
5k ohms
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