Silicon Schottky Diode Ring Quad Chips
MA4E2062 Series
M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The preliminary specifications data sheet contains typical electrical specifications which may change prior to final introduction.
Features
Small Size
Designed for High Volume, Low Cost
Closely Matched Junctions
High Reliability and Mechanically Rugged
Three Barrier Heights Available
Useful to X-Band
Available in Chip or Plastic SOT-143 Package
Description
M/A-COM’s MA4E2062 series is a high-performance silicon
Schottky low, medium and high barrier Ring Quads.
Typical
applications include industrial and commercial applications in
mixer and modulator circuits to X-band.
The MA4E2062 Ring Quad is fabricated using monolithic silicon
diode technology that features gold metalization and IC passiva-
tion for increased performance and reliability. The closely
matched junctions minimize variation in capacitance, forward
voltage and series resistance between the four diodes which make
up this ring quad.
The MA4E2062 series is available as a chip (MA4E2062) and in
the plastic SOT-143 package (MA4E2062-1068T).
The chip,
MA4E2062, is available in Tape Frame and Gel Pack and the
plastic SOT-143 package style is available in Tape and Reel for
automatic pick and place assembly.
Notes: (unless otherwise specified)
1. Dimensions are in/mm
2. Bondpad Metalization is Gold.
3. Back side is silicon
SOT-143 (1068)
Silicon Schottky Diode
Ring Quards
MA4E2062 Series
Preliminary Specifications
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Operating Temperature
Chip
-65°C to +150°C
SOT-143
-65°C to +125°C
Incident RF Power (CW)2,3,4
75 mW
DC Current
50 mA
Junction Temperature
150°C
Storage Temperature
Chip
-65°C to +150°C
SOT-143
-65°C to +125°C
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25 °C.
3. Derate at 3 mW/°C for Tc > 125°C (chip).
4. Derate linearly to zero watts at 125°C case temperature (SOT-143).
Package Outlines
1,2,3
Chip
0.016
±.002
(0.40
±0.05)
0.004
±.0005
(0.10
±0.01)
0.001
±.001
(0.02
±0.02)
0.001
±.001
(0.02
±0.02)
0.004
±.0005
(0.10
±0.01)
0.016
±.002
(0.40
±0.05)
0.007
±.001
(0.175
±0.02)
G
J
E
K
A
H
M
C
F
B
L
P
N
D
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
0.044
1.10
B
0.044
1.10
C
0.040
1.00
D
0.030
0.035
0.75
0.90
E
0.013
0.020
0.35
0.50
F
0.003
0.006
0.08
0.15
G
0.110
0.119
2.80
3.00
H
0.047
0.056
1.20
1.40
J
0.075 typical
1.90 typical
K
0.075 typical
1.90 typical
L
0.103
2.6
M
0.024
0.6
DIM.
GRADIENT
N10
° max. 1
Note:
P2
° . . . 30°
1. Applicable on all sides