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参数资料
| 型号： | MA4E2099-1284W |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, HIGH BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 封装： | CASE ODS-1284, DIE-4 |
| 文件页数： | 1/3页 |
| 文件大小： | 102K |
| 代理商： | MA4E2099-1284W |
1
High Barrier Silicon Schottky Diodes:
Bridge Octoquad
M/A-COM Products
Rev. V3
MA4E2099-1284
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Features
Designed for High Dynamic Range Applications
Low Parasitic Capitance and Inductance
Low Parasitic Resistance
Recommended for DC - 12 GHz
Uniform Electrical Characteristics with each
junction
Rugged HMIC Construction with Polyimide
Scratch Protection
Description
The MA4E2099-1284 Bridge Octoquad is offered
for high dynamic range applications. This device is
constructed with Silicon High Barrier Schottky Di-
odes fabricated with the patented Heterolithic Mi-
crowave Integrated Circuit (HMIC) process to en-
sure electrical characteristics uniformity for each
junction. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in
a glass dielectric, which acts as a low dispersion,
low loss, microstrip transmission medium.
The
combination of silicon and glass allows HMIC de-
vices to have excellent loss and power dissipation
characteristics in a low profile, reliable device.
Applications
The device can be used in high power mixer, de-
tector, and limiter circuits through 12 GHz.
Absolute Maximum Ratings @ +25°C 1
Parameter
Value
Operating Temperature
-55°C to +150°C
Storage Temperature
-55°C to +150°C
Forward Current
20 mA
Reverse Voltage
| -9 V |
RF C.W. Incident Power
+25 dBm
RF & DC Dissipated Power
100 mW
ODS-1284 Outline ( Topview )
DIM
INCHES
MIN.
MAX.
MIN.
MAX.
A
0.0285
0.0297
0.725
0.755
B
0.0285
0.0297
0.725
0.755
C
0.0040
0.0060
0.102
0.153
D Sq.
0.0035
0.0043
0.090
0.110
E
0.0165
0.0173
0.420
0.440
MILLIMETERS
1. Exceeding any one of these values may result in permanent
damage.
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