- 您现在的位置：买卖IC网 > PDF目录133388 > MA4E2200E1-1068T SILICON, ZERO BARRIER SCHOTTKY, S BAND, MIXER DIODE PDF资料下载
参数资料
| 型号： | MA4E2200E1-1068T |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, ZERO BARRIER SCHOTTKY, S BAND, MIXER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1068, 4 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 98K |
| 代理商： | MA4E2200E1-1068T |
3
Surface Mount Zero Bias Schottky Detector Diodes
M/A-COM Products
Rev. V5
MA4E2200 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Maximum Ratings @ +25 °C (Unless Otherwise Defined)
1,2
1. Operation above any one of the above parameters may cause permanent damage.
2. Please refer to Application Note M538 for Surface Mounting Instructions
3. Human Body Model
Parameter
Unit
Maximum Ratings
Operating Temperature
°C
-65 to +125
Storage Temperature
°C
-65 to +150
Junction Temperature
°C
+175
RF Incident Power (CW)
mW
75
Reverse Voltage @ 25 °C
V
1.5 V
Electrostatic Discharge ( ESD ) Classification
3
-
Class 0
Electrical Specifications @ +25 °C
Parameter
Condition
Symbol
Specification
Reverse Voltage Breakdown
IR = 100 μA
Vb
1.5 V min.
Forward Voltage
IF = 0.1 mA
VF
60 – 120 mV max.
Forward Voltage
IF = 1 mA
VF
150 - 220 mV max.
Total Capacitance
VR = 0.15 V
CT
.25 pF typical
Delta Forward Voltage
IF = 1 mA
VF
10 mV max.
Video Resistance
RV
7000
Ω typical
相关PDF资料 |
PDF描述 |
|---|---|
| MSD50-16 | 3 PHASE, 1600 V, SILICON, BRIDGE RECTIFIER DIODE |
| MMBD4448HAQWP | 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE |
| MA1.5KE62AE3 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MASMLJ24AE3 | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| MASMLJ36E3TR | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2501 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes |
| MA4E2501-1290 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes |
| MA4E2501L- | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes |
| MA4E2501L-1290 | 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE |
| MA4E2501L-1290T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes |
发布紧急采购，3分钟左右您将得到回复。