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参数资料
| 型号： | MA4E2501L-1290W |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封装： | CASE 1290, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 103K |
| 代理商： | MA4E2501L-1290W |
SURMOUNTTM Low Barrier 0201 Footprint
Silicon Schottky Diodes
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1
Series V1
MA4E2501-1290
A
C
D
E
F
G
B
Features
Extremely Low Parasitic Capitance and
Inductance
Extremely Small 0201 (600x300um) Footprint
Surface Mountable in Microwave Circuits, No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C,
16 hours)
Lower Susceptibility to ESD Damage
Description and Applications
The
MA4E2501L-1290
SurMount
Diodes are
Silicon Low Barrier Schottky Devices fabricated with
the
patented
Heterolithic
Microwave
Integrated
Circuit (HMIC) process. HMIC circuits consist of
Silicon
pedestals
which
form
diodes
or
via
conductors embedded in a glass dielectric, which
acts as the low dispersion, microstrip transmission
medium. The combination of silicon and glass allows
HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable
device.
The
Surmount
Schottky
devices
are
excellent
choices for circuits requiring the small parasitics of a
beam
lead
device
coupled
with
the
superior
mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to
connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They
have
lower
susceptibility
to
electrostatic
discharge than conventional beam lead Schottky
diodes.
The
multi-layer
metalization
employed
in
the
fabrication of the Surmount Schottky junctions
includes a platinum diffusion barrier, which permits
all
devices
to
be
subjected
to
a
16-hour
non-operating stabilization bake at 300
°C.
The extremely small “ 0201 ” outline allows for
Surface
Mount
placement
and
multi-functional
polarity orientations.
Case Style 1290
The
MA4E2501L-1290
SurMount
Low
Barrier
Schottky diodes are recommended for use in
microwave circuits through Ku band frequencies for
lower
power
applications
such
as
mixers,
sub-harmonic mixers, detectors and limiters. The
HMIC construction facilitates the direct replacement
of
more
fragile
beam
lead
diodes
with
the
corresponding
Surmount
diode,
which
can
be
connected to a hard or soft substrate circuit with
solder.
Dim
Inches
Millimeters
Min.
Max.
Min.
Max.
A
0.023
0.025
0.575
0.625
B
0.011
0.013
0.275
0.325
C
0.004
0.008
0.102
0.203
D
0.006
0.150
E
0.007
0.009
0.175
0.225
0.008
0.200
F
0.006
0.008
0.150
0.200
G
0.009
0.011
0.220
0.270
-
Cathode
+
Anode
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