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参数资料
| 型号： | MA4E2502H-1246W |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封装： | CASE 1246, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 110K |
| 代理商： | MA4E2502H-1246W |
3
SURMOUNTTM Low, Medium, and High
Barrier Silicon Schottky Diodes
M/A-COM Products
Rev. V7
MA4E2502 Series
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is
considering for development. Performance is based on target specifications, simulated results, and/
or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions
has under development. Performance is based on engineering tests. Specifications are typical.
Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit-
ment to produce in volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Applications Section
The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a
50 ohm transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5mm
connector and the output voltage was measured through a bias tee on a voltmeter.
Matching was not attempted.
MA4E2502L-1246
Frequency (GHz) vs. Output Voltage (V)
0.01
0.1
1
10
8
11
1417
2023
Frequency (GHz)
O
u
tp
u
tV
o
lt
ag
e(
V
)
-20 dBm
-10 dBm
0 dBm
+10 dBm
+20 dBm
MA4E2502L-1246
Input Pow er (dBm ) vs. Output Voltage (V)
0.01
0.1
1
10
-20
-15
-10
-5
0
5
10
Input Pow er (dBm )
O
u
tp
u
tV
o
lt
ag
e
(V
)
8 GHz
18 GHz
23 GHz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2502L | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes |
| MA4E2502L-1246 | 功能描述:肖特基二极管与整流器 DC-18GHz Vf@1mA = 300mv typ. RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MA4E2502L-1246T | 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE |
| MA4E2502L-1246W | 制造商:M/A-COM Technology Solutions 功能描述:SCHOTTKY 5V 0.02A DO-41 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE |
| MA4E2502M | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes |
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