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参数资料
| 型号： | MA4E2508M-1112 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封装： | CASE 1112, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 97K |
| 代理商： | MA4E2508M-1112 |
1
SURMOUNTTM Low, Medium, & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
M/A-COM Products
Rev. V3
MA4E2508 Series
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Features
Extremely Low Parasitic Capitance & Induc-
tance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
Rugged HMIC Construction with polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100 % Stabilization Bake (300°C, 16
hours)
Lower Susceptibility to ESD Damage
Description
The MA4E2508 SURMOUNT
TM Anti-Parallel Diode
Series are Silicon Low, Medium, & High Barrier
Schottky Devices fabricated with the patented Het-
erolithic Microwave Integrated Circuit (HMIC) proc-
ess.
HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in
a glass dielectric, which acts as the low dispersion,
low loss, microstrip transmission medium. The
combination of silicon and glass allows HMIC de-
vices to have excellent loss and power dissipation
characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The SurMount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
The multi-layer metalization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount place-
ment and multi- functional polarity orientations.
Case Style 1112
A
A
B
C
D
E
D
DIM
INCHES
MIN.
MAX.
MIN.
MAX.
A
0.0445
0.0465
1.130
1.180
B
0.0169
0.0189
0.430
0.480
C
0.0040
0.0080
0.102
0.203
D Sq.
0.0128
0.0148
0.325
0.375
E
0.0128
0.0148
0.325
0.375
MILLIMETERS
Equivalent Circuit
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2508M-1112W | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair |
| MA4E2508MSP-T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair |
| MA4E2513 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNT Low Barrier Tee “0301” Footprint Silicon Schottky Diodes |
| MA4E2513-1289 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNT Low Barrier Tee “0301” Footprint Silicon Schottky Diodes |
| MA4E2513L-1289 | 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE |
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