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参数资料
| 型号： | MA4E2513L-1289W |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封装： | CASE 1289, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 99K |
| 代理商： | MA4E2513L-1289W |
2
SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon
Schottky Diodes
M/A-COM Products
Rev. V2
MA4E2513L-1289
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
Electrical Specifications @ 25°C (per junction) 1,2
Model Number
Type
Recommended
Freq. Range
Vf @ 1 mA
(mV)
Vb @ 10 uA
(V)
Ct @ 0 V
(pF)
Rt Slope Resistance
(Vf1 - Vf2) /
(10.5mA - 9.5 mA)
()
MA4E2513L-1289
Low Barrier
DC - 18 GHz
330 Max
300 Typ
3 Min
5 Typ
0.12 Max
0.10 Typ
10 Typ
14 Max
1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic resistance.
2. DC parameters noted above are referenced to the contact (mounting) side of the chip.
Handling
All semiconductor chips should be handled with
care to avoid damage or contamination from per-
spiration and skin oils. The use of plastic tipped
tweezers or vacuum pickups is strongly recom-
mended for individual components.
The top sur-
face of the die has a protective polyimide coating to
minimize damage.
The rugged construction of these Surmount de-
vices allows the use of standard handling and die
attach techniques. It is important to note that in-
dustry standard electrostatic discharge (ESD) con-
trol is required at all times, due to the sensitive na-
ture of Schottky junctions.
Bulk handling should
insure that abrasion and mechanical shock are
minimized.
Die Bonding
Die attach for these devices is made simple
through the use of surface mount die attach tech-
nology. Mounting pads are conveniently located on
the bottom surface of these devices, and are oppo-
site the active junction.
These devices are well
suited for high temperature solder attachment onto
hard substrates. 80Au/20Sn and Sn63/Pb37 sol-
ders are acceptable for usage.
Die attach with
electrically conductive silver epoxy is not recom-
mended.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When solder-
ing to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting
pads. Position the die so that its mounting pads
are aligned with the circuit board mounting pads.
Reflow the solder paste by applying equal heat to
the circuit at both die-mounting pads. The solder
joint must not be made one at a time, creating un-
equal heat flow and thermal stress. Solder reflow
should not be performed by causing heat to flow
through the top surface of the die. Since the HMIC
glass is transparent, the edges of the mounting
pads can be visually inspected through the die after
the die attach is completed.
Absolute Maximum Ratings 3
Parameter
Value
Operating Temperature
-40°C to 150°C
Storage Temperature
-40°C to 150°C
Junction Temperature
+175°C
Forward Current
20 mA
Reverse Voltage
5 V
RF C.W. Incident Power
+20 dBm
RF & DC Dissipated Power
50 mW
3. Exceeding any of these values may result in permanent dam-
age.
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相关代理商/技术参数 |
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| MA4E2514 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair |
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