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参数资料
| 型号： | MA4E2515L |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE |
| 文件页数： | 1/6页 |
| 文件大小： | 108K |
| 代理商： | MA4E2515L |
Surface Mount Chip Monolithic
Low Barrier Schottky Diodes
MA4E2500
Surmount Series
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
1
Specications Subject to Change Without Notice.
Features
q
Singles, Pairs, Tees, Ring and Cross-over Quads
q
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16 hours)
q
Lower Susceptibility to ESD Damage
q
Very Low Parasitic Capacitance and Inductance
q
Rugged HMIC Construction
q
Surface Mountable in Hybrid Circuits
q
No Wirebonds Required
q
JANTX or MIL-S-883 Element 5008 Equivalent
Screening Available
Description
The MA4E2500L SurMount series diodes are silicon low
barrier Schottky monolithic chip devices fabricated with
the Heterolithic Microwave Integrated Circuit (HMIC)
process. HMIC circuits consist of silicon pedestals, which
may form diodes or conductors, embedded in a glass
dielectric, which is used as the microstrip medium. The
combination of silicon and glass allows HMIC devices to
have excellent power handling and electrical perfor-
mance in a small rugged chip.
The SurMount Schottky devices are excellent choices for
circuits where the minimal parasitics of a beam lead
structure are required, but the mechanical fragility of a
beam lead is a liability. The SurMount chip structure
employs very low resistance silicon vias to connect the
Schottky contacts to the metalized mounting pads on the
bottom surface of the chip without using wirebonds.
These devices are low cost, rugged and reliable. They
have lower susceptibility to electrostatic discharge than
beam lead Schottky diodes. They are optionally available
with JANTX or MIL-S-883 Element 5008 equivalent
screening, and are suitable for space applications.
The multi-layer metalization employed in the fabrication
of the SurMount chip Schottky junctions includes a plat-
inum diffusion barrier, which permits all devices to be
subjected to a 16 hour non-operating stabilization bake
at 300°C.
The available congurations for the MA4E2500L series of
silicon low barrier SurMount chip Schottky devices
include single diodes, anti-parallel pairs, ring quads,
cross-over ring quads and series tees.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4E2532 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNT Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series |
| MA4E2532L-1113 | 制造商:M/A-COM Technology Solutions 功能描述:RF SCHOTTKY DIODE |
| MA4E2532L-1113T | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series |
| MA4E2532L-1113W | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series |
| MA4E2532M-1113 | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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