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参数资料
| 型号： | MA4E2544L-1282W |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE |
| 封装： | CASE 1282, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 105K |
| 代理商： | MA4E2544L-1282W |
SurMount
TM Low Barrier Silicon Schottky Diodes: Cross-Over Quad Series
MA4E2544L-1282
V 1.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
2
Electrical Specifications @ 25 °C (Measured as Single Diodes)
Handling
All semiconductor chips should be handled with care to avoid
damage or contamination from perspiration and skin oils. The
use of plastic tipped tweezers or vacuum pickups is strongly
recommended for individual components. The top surface of
the die has a protective polyimide coating to minimize damage.
The rugged construction of these SurMount devices allows the
use of standard handling and die attach techniques. It is
important to note that industry standard electrostatic discharge
(ESD) control is required at all times, due to the sensitive
nature of Schottky junctions.
Bulk handling should insure that abrasion and mechanical
shock are minimized.
Parameter
Value
Operating Temperature
-40 °C to +150 °C
Storage Temperature
-40 °C to +150 °C
Junction Temperature
+175 °C
Reverse Voltage (10 m
Α)
5 V
RF C.W. Incident Power
+ 20 dBm
RF & DC Dissipated Power
50 mW
Forward Current
20 mA
Absolute Maximum Ratings
1
@ +25 °C
1. Exceeding any of these values may result in permanent
damage
Model
Number
Type
Recommended
Frequency
Range
Vf @ 1 mA
( mV )
Ct @ 0 V
( pF )
Rt Slope Resistance
( Vf1 - Vf2 )/(10.5 mA-9.5 mA )
(
)
MA4E2544L-1282
Low
Barrier
DC - 18 GHz
330 Max
300 Typ
0.22 Max
0.15 Typ
16 Typ
20 Max
Rt is the dynamic slope resistance where
Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is
the Ohmic Resistance
Die Bonding
Die attach for these devices is made simple through the use
of surface mount die attach technology. Mounting pads are
conveniently located on the bottom surface of these
devices, and are opposite the active junction. The devices
are well suited for higher temperature solder attachment
onto hard substrates. 80Au/20Sn and Sn63/Pb37 solders are
acceptable for usage.
Die Attach
For Hard substrates, we recommend utilizing a vacuum tip
and force of 60 to 100 grams applied uniformly to the top
surface of the device, using a hot gas bonder with equal
heat applied across the bottom mounting pads of the device.
When soldering to soft substrates, it is recommended to use
a lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are aligned with
the circuit board mounting pads. Reflow the solder paste by
applying Equal heat to the circuit at both die-mounting
pads. The solder joint must Not be made one at a time,
creating un-equal heat flow and thermal stress. Solder
reflow should Not be performed by causing heat to flow
through the top surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be visually
inspected through the die after die attach is complet
ed.
Max Forward Voltage Difference
Vf @ 1 mA: 10 mV
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