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参数资料
| 型号： | MA4E975L-1000 |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, LOW BARRIER SCHOTTKY, C-X BAND, MIXER DIODE |
| 文件页数： | 2/2页 |
| 文件大小： | 61K |
| 代理商： | MA4E975L-1000 |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 (03) 3226-1671
s
Europe: Tel.
+44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
2
Specifications Subject to Change Without Notice.
V3.00
Schottky Barrier Packaged and Beam Lead Tees
MA4E20, MA4E970 Series
Electrical Specifications at 25°C
Schottky Tees
4. Reverse voltage is measured at I
R = 10 A.
5. The standard case styles for the forward tee series is 271, and the
Schottky beam lead tees are 270, 271, 272 and 1000.
6. The standard case style for the reverse tee series of diodes is case
style 1012. Tees are available in case styles 270, 272 and 1000.
7. To order parts specify the package as a suffix, i.e., MA4E201L-270 is a
low barrier tee in case style 270.
Maximum
1
Maximum
2
Maximum
1
Junction
Nominal
2
Forward
Nominal
Junction
Capacitance Maximum
3
Forward
Voltage
Noise
Minimum
4
Suggested
Capacitance
Difference
Resistance
Voltage
Match
Figure
Reverse
Model
5,7
Barrier
Frequency
Cj
R
S
V
F
V
F
NF
Voltage
Number
Height
(Hz)
(pF)
(Ohms)
(Volts)
(dB)
V
R
MA4E201L
Low
S
0.50
0.10
7
0.25
0.015
6.0
2
MA4E204L
Low
C-X
0.35
0.10
10
0.27
0.015
6.5
2
MA4E207L
Low
Ku
0.20
0.05
12
0.30
0.015
7.5
2
MA4E201M
Medium
S
0.50
0.10
7
0.35
0.015
6.0
3
MA4E204M
Medium
C-X
0.35
0.10
10
0.37
0.015
6.5
3
MA4E207M
Medium
Ku
0.20
0.05
12
0.40
0.015
7.5
3
MA4E201H
High
S
0.50
0.10
7
0.55
0.015
6.0
5
MA4E204H
High
C-X
0.35
0.10
10
0.57
0.015
6.5
5
MA4E207H
High
Ku
0.20
0.05
12
0.60
0.015
7.5
5
Schottky Reverse Tees
Maximum
1
Maximum
2
Maximum
1
Junction
Nominal
2
Forward
Nominal
Junction
Capacitance
Maximum3
Forward
Voltage
Noise
Minimum
4
Capacitance
Difference
Resistance
Voltage
Match
Figure
Reverse
Model
6,7
Barrier
Frequency
C
j
C
j
R
S
V
F
V
F
NF
Voltage
Number
Height
(H
Z)
(pF)
(Ohms)
(Volts)
(dB)
V
R
MA4E974L
Low
S
0.50
0.10
7
0.25
0.015
6.0
2
MA4E975L
Low
C-X
0.35
0.10
10
0.27
0.015
6.5
2
MA4E976L
Low
Ku
0.20
0.05
12
0.30
0.015
7.5
2
MA4E974M
Medium
S
0.50
0.10
7
0.25
0.015
6.0
3
MA4E975M
Medium
C-X
0.35
0.10
10
0.27
0.015
6.5
3
MA4E976M
Medium
Ku
0.20
0.05
12
0.30
0.015
7.5
3
MA4E974H
High
S
0.50
0.10
7
0.25
0.015
6.0
4
MA4E975H
High
C-X
0.35
0.10
10
0.27
0.015
6.5
4
MA4E976H
High
Ku
0.20
0.05
12
0.30
0.015
7.5
4
Notes:
1. C
j and Cj are measured at VR = 0 volts and f = 1.0 MHz.
2. V
F is measured at IF = 1.0 mA.
3. Series resistance, R
S, is determined by subtracting the junction
resistance, R
j, from the measured value of 10 mA dynamic (slope)
resistance, R
T:
R
S = RT- Rj Ohms
Junction resistance is computed from the following equation:
R
j - 26/lF Ohms
I
F = 10 mA
I
F is the forward bias current in mA.
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