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参数资料
| 型号： | MA4GP03030 |
| 元件分类： | PIN二极管 |
| 英文描述： | 100 V, GALLIUM ARSENIDE, PIN DIODE |
| 封装： | ROHS COMPLIANT, CASE 30, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 327K |
| 代理商： | MA4GP03030 |
RoHS Compliant
V1
GaAs PIN Diode Chips
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product
information.
Features
May Be Directly Driven By TTL Signals
RoHS Compliant
Low Series Resistance
Fast Switching Speed
No Reverse Bias Required
Description
Gallium
Arsenide
PIN
diodes
offer
improved
performance characteristics over silicon in many
microwave
semiconductor
applications
These
benefits result from the intrinsic semiconductor
properties of GaAs. Its inherent high carrier mobility
results in a low resistance fast switching device. The
low carrier concentration in the I region layer
produces a near zero punch through bias voltage.
Gallium Arsenide's high band gap also assures it will
operate at high operating temperatures.
Switching speeds in the low nanosecond range
using an inexpensive TTL buffer logic is attainable
with GaAs PIN diodes. This performance can be
achieved because GaAs PIN diodes exhibit high
impedance at a positive bias (up to .5V). Reverse
bias is not required for many GaAs PIN diode
applications. Low loss, in switch and phase shifter
circuits at frequencies up to 40 GHz is possible as a
result of low parasitic series resistance in the
conducting and non-conducting states.
M/A-COM’s GaAs PIN diode chips are also available
in several different package styles. See page 4
1. Exceeding these limits may cause permanent damage.
Anode
Full Area Cathode
Absolute Maximum Ratings1
MIL-STD 750 Environmental Ratings
Parameter
Method
Level
Temp. Cycling
1051
5cycles
-65°C to +150°C
Vibration
2056
15g’s
Constant Acceleration
2006
20,000g”s
Moisture Resistance
(Packaged diodes)
1021
10 Days
Parameter
Maximum Value
Operating Temperature
-65°C to +175°C
Storage Temperature
-65°C to +175°C
Power Dissipation
0.25W @ 25°C
Junction Temperature
+175
°C
Mounting Temperature
+320
°C for 10 seconds
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4GP030-30 | 制造商:M/A-COM Technology Solutions 功能描述:GAAS PIN DIODE - Bulk |
| MA4GP030-31 | 制造商:M/A-COM Technology Solutions 功能描述:GAAS PIN DIODE - Bulk |
| MA4GP030-94 | 制造商:M/A-COM Technology Solutions 功能描述:GAAS PIN DIODE - Bulk |
| MA4GP905 | 制造商:M/A-COM Technology Solutions 功能描述:DIODE,PIN,BEAM_LEAD,HMIC,1209 PKG - Gel-pak, waffle pack, wafer, diced wafer on film |
| MA4GP907 | 功能描述:PIN 二极管 2-3NS switching spd -55C +125C 250mW RoHS:否 制造商:Skyworks Solutions, Inc. 配置: 反向电压:200 V 正向连续电流: 频率范围:10 MHz to 6 GHz 端接类型:SMD/SMT 封装 / 箱体:QFN-3 封装:Reel |
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