参数资料
型号: MA4P160-134
元件分类: PIN二极管
英文描述: SILICON, PIN DIODE
封装: 13 X 13 MM, ROHS COMPLIANT, DIE-1
文件页数: 6/6页
文件大小: 615K
代理商: MA4P160-134
Silicon PIN Diode Chips
RoHs Compliant
V6.0
Specification Subject to Change Without Notice
Die Handling and Mounting Information
Handling: All semiconductor chips should be handled with care to avoid damage or contamination from
perspiration, salts, and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly
recommended for individual components. Bulk handling should ensure that abrasion and mechanical shock
are minimized.
Die Attach Surface: Die can be mounted with a Au 80 / Sn 20 , or Sn 60 / Pb 40 type eutectic solder
preform or electrically conductive silver epoxy. The metal RF and D.C. ground plane mounting surface must
be free of contamination and should have a surface flatness of < +/- 0.002”.
Eutectic Die Attachment Using Hot Gas Die Bonder: An 80 Au / 20 Sn, eutectic, solder preform is
recommended with a work surface temperature of 255
oC. When the hot forming gas is applied, the work
area temperature should be approximately 290
oC. The chip should not be exposed to temperatures greater
than 320
oC for more than 10 seconds.
Eutectic Die Attachment Using Reflow Oven: See Application Note M541, “Bonding and Handling
Procedures for Chip Diode Devices” at www.macom.com for recommended time-temperature profile.
Electrically Conductive Epoxy Die Attachment:
Assembly should be preheated to 125-150
oC per
manufacturers instructions. A controlled amount of electrically conductive, silver epoxy, approximately
1–
2 mils in thickness, should be used to minimize ohmic and thermal resistance. A thin epoxy fillet should be
visible around the perimeter of the chip after placement to ensure full area coverage. Cure conductive
epoxy per manufacturer’s schedule.
Wire and Ribbon Bonding: The Die anode bond pads have a Ti-Pt-Au metallization scheme, with a final
gold thickness of 1.0 micron. Thermo-compression or thermo-sonic wedge bonding of either gold wire or
ribbon is recommended. A bonder heat stage temperature setting of 200
oC, tool tip temperature of 150°C
and a force of 18 to 50 grams is suggested. Ultrasonic energy may also be used but should be adjusted to
the minimum required amplitude to achieve a good bond. Excessive energy may cause the anode
metallization to separate from the chip. Automatic ball or wedge bonding can also be used.
For more detailed handling and assembly instructions, see Application Note M541,
“Bonding and Handling Procedures for Chip Diode Devices” at www.macom.com.
M/A-COM Inc.
43 South Avenue, Burlington, MA 01803 USA
Telephone: 781-564-3100
6
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