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参数资料
| 型号： | MA4ST563-30 |
| 元件分类： | 变容二极管 |
| 英文描述： | L-KU BAND, 8.2 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| 封装： | CERAMIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 89K |
| 代理商： | MA4ST563-30 |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
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Asia/Pacific: Tel. +81 (03) 3226-1671
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1
Specifications Subject to Change Without Notice.
V3.00
High Q Hyperabrupt
Tuning Varactors
MA4ST550 Series
Features
q
High Q
q
Usable Capacitance Change of 7:1
q
Low Reverse Leakage for Good Post
Tuning Drift Characteristics
q
Reproducible C-V Curves
Description
The MA4ST550 family of high Q Silicon Hyperabrupt
Tuning Varactors is available in a series of low parasitic
capacitance microwave packages or in chip form.
The MA4ST550 series of diodes is available with junction
capacitances of approximately 0.8 pF to 8.2 pF at -4 volts.
These diodes have capacitance change ratios as high
as 7:1.
Applications
The MA4ST550 series is appropriate for use in VCOs with
frequencies within the range of approximately 1-14 GHz
where a large capacitance change is required. These
diodes are suited for VCOs in missile seekers, telecom-
munication systems and electronic warfare systems with
critical post tuning drift specifications.
Environmental Performance
All tuning varactors in ceramic packages are capable of
meeting the performance tests dictated by the methods
and procedures of the latest revisions of MIL-S-19500, MIL-
STD-202 and MIL-STD-750 which specify mechanical,
electrical, thermal and other environmental tests common
to semiconductor products.
Case Styles
134
30
31
Absolute Maximum Ratings at 25°C
Parameter
Absolute Maximum
Reverse Voltage
Same as Breakdown Voltage
Operating Temperature
- 65°C to +150°C
Storage Temperature
- 65°C to +200°C
Temperature Coefficient
400 ppm/°C at -4 Volts
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