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参数资料
| 型号： | MA4T324300 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/8页 |
| 文件大小： | 102K |
| 代理商： | MA4T324300 |
Bipolar High f
T Low Voltage NPN Silicon Transistors
MA4T3243 Series
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
2
Specications Subject to Change Without Notice.
Note:
1. At 25°C case temperature (packaged transistors) or 25°C mounting surface temperature (chip transistors).
2. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature.
3. The thermal resistance of the MA4T324300 junction/case is 50°C/watt nominal.
Maximum Ratings
Electrical Specications @ 25°C
MA4T324300
MA4T324333
MA4T324335
Parameter
Symbol
Unit
Chip
SOT-23
Micro-X
Collector-Base Voltage1
V
CBO
Volts
8
Collector-Emitter Voltage1
V
CE
Volts
6
Emitter-Base Voltage1
V
EB
Volts
1.5
Collector Current1
I
C
mA
110
Junction Temperature
T
j
°C
200
125
200
Storage Temperature
T
STG
°C
-65 to +175°C
-65 to +125°C
-65 to +175°C
Power Dissipation1,3
P
T
mW
600
250
400
Operating Temperature2
T
cp
°C
150
125
150
MA4T324300
MA4T324333
MA4T324335
Parameter
Condition
Symbol
Units
Chip
SOT-23
Micro-X
Gain Bandwidth Product
V
CE = 3 volts
f
T
GHz
6 typ
I
C = 50 mA
Insertion Power Gain
V
CE = 3 volts
lS
21El
2
dB
I
C = 40 mA
f = 1 GHz
7 min
6 min
7 min
f = 2 GHz
3 typ
2.5 typ
3 typ
Noise Figure
V
CE = 3 volts
NF
dB
I
C = 10 mA
f = 1 GHz
2.2 max
2.4 max
2.2 max
Unilateral Gain
V
CE = 3 volts
GTU (max)
dB
I
C = 40 mA
f = 1 GHz
10 typ
9 typ
10 typ
f = 2 GHz
6 typ
4 typ
6 typ
Maximum Available Gain
V
CE = 3 volts
MAG
dB
I
C = 40 mA
f = 2 GHz
8.5 typ
7 typ
8.5 typ
Power Out at 1 dB
V
CE = 3 volts
P
1dB
dBm
Compression
I
C = 50 mA
f = 2 GHz
20 typ
19 typ
20 typ
f = 3 GHz
15 typ
相关PDF资料 |
PDF描述 |
|---|---|
| MA4T324335 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333TR3 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333RT3 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324330 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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参数描述 |
|---|---|
| MA4TD0410 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD0410T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4VAT2000 | 制造商:M/A-COM Technology Solutions 功能描述:ATTENUATOR - VARIABLE VOLTAGE |
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