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参数资料
| 型号： | MA4T324335 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 5/8页 |
| 文件大小： | 102K |
| 代理商： | MA4T324335 |
Bipolar High f
T Low Voltage NPN Silicon Transistors
MA4T3243 Series
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
5
Specications Subject to Change Without Notice.
V3.00
NOMINAL COLLECTOR-BASE CAPACITANCE (C
OB)
vs COLLECTOR-BASE VOLTAGE (MA4T324335)
NOMINAL GAIN vs FREQUENCY AT V
CE = 3 VOLTS
AND I
C = 20 mA (MA4T324335)
COLLECTOR EMITTER
VOLTAGE (VOLTS)
06
4
2
COLLECTOR
CURRENT
(mA)
80
20
50
100
110
200
10
MA4T324300 CHIP
ON 25°C HEAT SINK
MA4T324333
SOT-23
MA4T324335
MICRO-X
-25
75 100 125 150 175 200
50
25
0
TOTAL
POWER
DISSIPATION
(mW)
AMBIENT TEMP (°C)
1000
900
800
700
600
500
400
300
200
100
0
MA4T324335
MICRO-X
MA4T324333
SOT-23
MA4T324300
CHIP ON 25°C
HEAT SINK
FREQUENCY (GHz)
12
10
8
6
4
2
0
110
GAIN
(dB)
GTU(MAX)
S21E
2
COLLECTOR-BASE VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
110
COLLECTOR-BASE
CAPACITANCE
(pF)
Typical Performance Curves
DC SAFE OPERATING RANGE AT 25°C
NOMINAL POWER DERATING CURVES
相关PDF资料 |
PDF描述 |
|---|---|
| MA4T324333 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333TR3 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333RT3 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324330 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T324333TR7 | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4TD0410 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD0410T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4VAT2000 | 制造商:M/A-COM Technology Solutions 功能描述:ATTENUATOR - VARIABLE VOLTAGE |
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