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参数资料
| 型号： | MA4T631035 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/8页 |
| 文件大小： | 73K |
| 代理商： | MA4T631035 |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 (03) 3226-1671
s
Europe: Tel.
+44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
2
This Preliminary Specifications Data Sheet Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.
V 2.00
Notes:
1. Junction/Heat Sink R
TH (J-C)
2. Free Air
3 Volt, Low Noise High f
T Silicon Transistor
MA4T6310 Series
Absolute Maximum Ratings at 25°C
Electrical Specifications at 25°C
MA4T631035
MA4T631033
MA4T631039
MA4T631000
Parameter
Condition
Symbol
Units
Micro-X
SOT-23
SOT-143
Chip
Gain Bandwidth
V
CE = 3 V
f
T
GHz
Product
I
C = 6 mA
14 typ.
12 typ.
14 typ.
Insertion Power Gain
V
CE = 3 V
|S
21E|
2
dB
I
C = 4 mA
f = 1 GHz
11.5 min.
11 min.
12 typ.
f = 2 GHz
8 typ.
7 typ.
8 typ.
Noise Figure
V
CE = 3 V
NF
dB
I
C = 0.5 mA
I
C = 1 mA
f = 1 GHz
1.6 max.
1.7 max.
1.5 typ.
Unilateral Gain
V
CE = 3 V
GTU
dB
I
C = 4 mA
(max)
f = 1 GHz
14.5 typ.
13 typ.
14.5 typ.
f = 2 GHz
9 typ.
8 typ.
9 typ.
Maximum Available
V
CE = 3 V
MAG
dB
Gain
I
C = 4 mA
f = 2 GHz
10 typ.
Power Out at 1 dB
V
CE = 3 V
P
1dB
dBm
Compression
I
C = 8 mA
f = 1 GHz
1.5 typ.
Thermal Resistance
Junction/
R
TH(J-A)
°C/W
600 typ.2
700 typ.2
75 max.1
Ambient
Note: 1. See power derating curve.
Parameter
Symbol
Absolute Maximum
Collector-Base Voltage
V
CBO
8 V
Collector-Emitter Voltage
V
CEO
6 V
Emitter-Base Voltage
V
EBO
1.5 V
Collector Current
I
C
10 mA
Junction Temperature
T
j
200 °C
Storage Temperature
Chips or Ceramic Packages
T
STG
-65°C to +200°C
Plastic Packages
-65°C to +125°C
Power Dissipation
P
D
60mW1
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