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参数资料
| 型号： | MA4T636500 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/8页 |
| 文件大小： | 101K |
| 代理商： | MA4T636500 |
Low Operating Voltage, High f
T Bipolar Microwave Transistors
MA4T6365 Series
V2.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
2
Specications Subject to Change Without Notice.
Maximum Ratings (TA = 25°C)
MA4T6365 Series
Collector-Base Voltage
V
CBO
10 V
Collector-Emitter Voltage
V
CE
6 V
Emitter-Base Voltage
V
EB
1.5 V
Collector Current
I
C
65 mA
Junction Operating Temperature
T
j
200°C
Storage Temperature
Chip or Ceramic Packages
T
S
-65°C to + 200°C
Plastic Packages
-65°C to +125°C
Power Dissipation
Package Type
Maximum Dissipation
Maximum Operating
@ 25°C
Temperature
Chip (MA4T636500)
400 mW
175°C
SOT-23 (MA4T636533)
200 mW
125°C
Micro-X Package (MA4T636535)
300 mW
150°C
SOT-143 (MA4T636539)
225 mW
125°C
Electrical Specications @ 25°C
MA4T6365 Series
MA4T636500
MA4T636535
MA4T636539
MA4T636533
Parameter of Test
Condition
Symbol
Units
Chip
Micro-X
SOT-143
SOT-23
Gain Bandwidth Product
V
CE = 3 V
f
T
GHz
10 typ
I
C = 20 mA
Insertion Power Gain
V
CE = 3 V
|S
21E|
2
dB
I
C = 10 mA
f = 1 GHz
14 typ
13 typ
f = 2 GHz
7.0 min
Noise Figure
V
CE = 3 V
NF
dB
I
C = 5 mA
f = 1 GHz
1.3 max
1.4 max
f = 2 GHz
1.6 typ
1.7 typ
Unilateral Gain
V
CE = 3 V
GTU (max)
dB
I
C = 5 mA
f = 1 GHz
15 typ
14 typ
f = 2 GHz
10 typ
9 typ
Maximum Available Gain
V
CE = 3 V
MAG
dB
I
C = 20 mA
f = 1 GHz
16 typ
f = 2 GHz
12 typ
11 typ
10 typ
Output Power at 1 dB
V
CE = 3 V
P
1dB
dBm
Compression
I
C = 20 mA
f = 2 GHz
16 typ
17 typ
16 typ
f = 4 GHz
12 typ
13 typ
12 typ
相关PDF资料 |
PDF描述 |
|---|---|
| MA4T636535 | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T638033 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T638033RT7 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T638039TR7 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MA4T638033TR7 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MA4TD0410 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD0410T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110 | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4TD1110T | 制造商:MPLUSE 制造商全称:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MA4VAT2000 | 制造商:M/A-COM Technology Solutions 功能描述:ATTENUATOR - VARIABLE VOLTAGE |
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