参数资料
型号: MA4T636535
元件分类: 小信号晶体管
英文描述: X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件页数: 6/8页
文件大小: 101K
代理商: MA4T636535
Low Operating Voltage, High f
T Bipolar Microwave Transistors
MA4T6365 Series
V2.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacic: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
6
Specications Subject to Change Without Notice.
NOMINAL DC CURRENT GAIN (h
FE) vs COLLECTOR CURRENT
AT V
CE = 3 VOLTS (MA4T636535)
Typical Performance Curves
NOMINAL GAIN BANDWIDTH PRODUCT (f
T) vs COLLECTOR
CURRENT AT V
CE = 3 VOLTS (MA4T636535)
NOMINAL NOISE FIGURE AND ASSOCIATED GAIN
vs FREQUENCY AT V
CE = 3 VOLTS,
COLLECTOR CURRENT = 5 mA (MA4T636535)
NOMINAL NOISE FIGURE AND ASSOCIATED GAIN AT
V
CE = 3 VOLTS, AND 1 GHz vs
THE COLLECTOR CURRENT (MA4T636535)
.1
1
10
100
NOISE
FIGURE
(dB)
FREQUENCY (GHz)
1
10
ASSOCIATED
GAIN
(dB)
2
NOISE FIGURE
ASSOCIATED GAIN
16
14
12
10
8
6
4
2
0
100
10
ASSOCIATED GAIN
NOISE FIGURE
ASSOCIA
TED
GAIN
(dB)
COLLECTOR CURRENT (mA)
NOISE
FIGURE
(dB)
GAIN
B
AND
WIDTH
PR
ODUCT
(GHz)
COLLECTOR CURRENT (mA)
12
10
8
6
4
2
0
100
10
DC
CURRENT
GAIN
(h
FE
)
COLLECTOR CURRENT (mA)
0
10
20 30 40
50 60
70
120
110
100
90
80
70
60
50
40
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