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参数资料
| 型号： | MA649 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Silicon planer type (cathode common) |
| 中文描述： | 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 157K |
| 代理商： | MA649 |
MA649
Silicon planer type (cathode common)
For switching
s Features
q High reverse voltage VR
q Low forward voltage VF
q Fast reverse recovery time trr
s Absolute Maximum Ratings (Ta= 25C)
Unit : mm
1 : Anode
2 : Cathode
(common)
3 : Anode
TO-220F(a) (TO-220 Full-Pack Package)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
-0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
3.1
±0.1
Condition
VRRM= 200V, TC= 25C
VRRM= 200V, Tj=150C
IF= 2.5A, TC= 25C
IF=1A, IR=1A
Flat direct current between junction and case
Unit
A
mA
V
ns
C/W
Symbol
IRRM1
IRRM2
VF
trr*
Rth(j-c)*
Rth(j-a)
Note 1. Rated input/output frequency : 10MHz
2. * trr measuring circuit
s Electrical Characteristics (Ta= 25C)
Unit
V
A
C
* Sine half wave : 10ms/cycle
Symbol
VRRM
VRSM
IF(AV)
IFSM*
Tj
Tstg
Rating
200
5
30
– 40 to +150
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Fast Recovery Diodes (FRD)
MA111
Parameter
Repetitive peak reverse current
Forward voltage (DC)
Reverse recovery time
Thermal resistance
min
typ
max
100
6
1
100
3
63
50
50
5.5
D.U.T
trr
0.1
× IR
IF
IR
s Internal Connection
123
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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