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参数资料
| 型号： | MA762 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, SILICON, RECTIFIER DIODE |
| 封装： | Full-Pack, TOP-3F, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 179K |
| 代理商： | MA762 |
582
Schottky Barrier Diodes (SBD)
MA3G762 (MA762)
Silicon epitaxial planar type (cathode common)
For switching power supply
I Features
Forward current (average) I
F(AV): 20 A type
Repetitive peak reverse voltage V
RRM: 90 V type
High reliability caused by sealed in the TOP-3F (Full-pack
package)
Cathode common dual type
I Absolute Maximum Ratings T
a = 25°C
Unit : mm
1 : Anode
2 : Cathode
(Common)
3 : Anode
TOP-3F (TO-3F Full-Pack Package )
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
90
V
Average forward current
IF(AV)
20
A
Non-repetitive peak forward
IFSM
130
A
surge current*
Junction temperature
Tj
40 to +125
°C
Storage temperature
Tstg
40 to +125
°C
Note) * : Sine half-wave; 10 ms/cycle
Marking Symbol: MA3G762
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 90 V
5
mA
Forward voltage (DC)
VF
IF = 10 A
0.85
V
Thermal resistance
Rth(j-c)
Direct current (between junction and case)
1.5
°C/W
I Electrical Characteristics T
a
= 25°C
Note) Rated input/output frequency: 100 MHz
Internal Connection
123
15.0
± 0.5
21.0
±
0.5
16.2
±
0.5
12.7
±
0.3
Solder
Dip
3.5
±
0.3
0.7
±
0.1
15.0
±
0.2
5.0
± 0.2
7.2
± 0.3
10.9
± 0.5
5.45
± 0.3
3
2
1
1.1
± 0.1
2.0
± 0.1
0.6
+ 0.2
0.1
2.0
± 0.1
φ 3.2 ± 0.1
3.2
± 0.2
Note) The part number in the parenthesis shows conventional part number.
Ma
int
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Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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