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参数资料
| 型号： | MA784TX |
| 厂商： | PANASONIC CORP |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.1 A, SILICON, SIGNAL DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 32K |
| 代理商： | MA784TX |
Condition
VR= 30V
IF=100mA
VR = 0V, f=1MHz
IF = IR=100mA
Irr= 10mA , RL=100
Unit
A
V
pF
ns
Symbol
IR
VF
Ct
trr*
Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on charge of a human body and leakage
from the equipment used.
2. Rated input/output frequency : 250MHz
3. * trr measuring circuit
s Electrical Characteristics (Ta= 25C)
Unit
V
mA
A
C
Symbol
VR
VRRM
IFM
IF(AV)
IFSM*
Tj
Tstg
* 50Hz sine wave, one-cycle wave, high value (non-repetitive)
MA784
Silicon epitaxial planer type
For super high-speed switching circuit
For small current rectification
s Features
q S-Mini type 2-pin package, enabling high-density mounting
q IF(AV)=100mA rectification possible
q Fast reverse recovery time trr, optimum for high-frequency rectifica-
tion
q Low VF (forward voltage) with high rectification efficiency
s Absolute Maximum Ratings (Ta= 25C)
Unit : mm
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Peak forward current
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Rating
30
300
100
1
125
– 55 to +150
Schottky Barrier Diodes (SBD)
2SK1606
A
Bias Insertion
Unit N-50BU
90%
Pulse Generator
PG-10N
Rs=50
W.F.Analyzer
SAS-8130
Ri=50
tp=2
s
tr=0.35ns
δ=0.05
IF=100mA
IR=100mA
RL=100
10%
Input Pulse
Output Pulse
Irr=10mA
tr
tp
trr
VR
IF
t
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
min
typ
20
2.0
max
15
0.55
s Marking
2D
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol : 2D
1
2
Cathode
Anode
0.625
0.3
1.25
±0.1
0.5
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0.4
±0.1
0.16
+0.1
–0.06
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