参数资料
型号: MAAM12000-A1
英文描述: Low Noise GaAs MMIC Amplifier 1.2 - 1.75 GHz
中文描述: 砷化镓单片低噪声放大器1.2 - 1.75吉赫
文件页数: 2/3页
文件大小: 185K
代理商: MAAM12000-A1
Low Noise GaAs MMIC Amplifier
1.2 - 1.75 GHz
MAAM12000-A1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
V4
2
RoHS
Compliant
Electrical Specifications: T
A
= 25°C, V
DD
= +5 V, V
GG
= -5 V, Z
0
= 50
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Gain
1.20 - 1.75 GHz, P
IN
= -30 dBm
dB
23
26
Noise Figure
1.20 - 1.75 GHz, P
IN
= -30 dBm
dB
1.35
1.8
Input VSWR
1.20 - 1.75 GHz, P
IN
= -30 dBm
Ratio
1.4:1
Output VSWR
1.20 - 1.75 GHz, P
IN
= -30 dBm
Ratio
1.4:1
Output 1 dB Compression
1.20 - 1.75 GHz
dBm
+14
Input IP3
1.20 - 1.75 GHz, P
IN
= -30 dBm
dBm
-2
Reverse Isolation
1.20 - 1.75 GHz, P
IN
= -30 dBm
dB
35
Bias Current
mA
80
110
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
Operating The MAAM12000-A1
Nominal bias is obtained by connecting -5 volts to
pin 4 (V
GG
) followed by connecting +5 volts to pin 5
(V
DD
). Note sequence.
Power down in reverse sequence.
Lead-Free
CR-3 (MAAM12000-A1)
Lead-Free
CR-10 (MAAM12000-A1G)
Reference Application Note M538 for lead-free solder reflow
recommendations.
相关PDF资料
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