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| 型号： | MAC210A10FP |
| 厂商： | MOTOROLA INC |
| 元件分类： | 晶闸管 |
| 英文描述： | ISOLATED TRIACs THYRISTORS 10 AMPERES RMS 200 thru 800 VOLTS |
| 中文描述： | 800 V, 10 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 112K |
| 代理商： | MAC210A10FP |
1
Motorola Thyristor Device Data
Motorola, Inc. 1995
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Gate Triggering Guaranteed in Three Modes (MAC210FP Series)
or Four Modes (MAC210AFP Series)
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125
°
C)
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC210-4FP, MAC210A4FP
MAC210-6FP, MAC210A6FP
MAC210-8FP, MAC210A8FP
MAC210-10FP, MAC210A10FP
VDRM
200
400
600
800
Volts
On-State RMS Current (TC = +70
°
C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70
°
C)
preceded and followed by rated current
IT(RMS)
ITSM
10
Amps
100
Amps
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Peak Gate Power (TC = +70
°
C, Pulse Width = 10
μ
s)
Average Gate Power (TC = +70
°
C, t = 8.3 ms)
Peak Gate Current (TC = +70
°
C, Pulse Width = 10
μ
s)
RMS Isolation Voltage (TA = 25
°
C, Relative Humidity
Operating Junction Temperature
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
Watts
0.35
Watt
2
Amps
20%)
1500
Volts
–40 to +125
°
C
Storage Temperature Range
–40 to +125
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
CS
R
θ
JA
2.2
°
C/W
Thermal Resistance, Case to Sink
2.2 (typ)
°
C/W
Thermal Resistance, Junction to Ambient
60
°
C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements s a point on the center ead of the package as close as possible to the plastic body.
Order this document
by MAC210FP/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221C-02
STYLE 3
ISOLATED TRIACs
THYRISTORS
10 AMPERES RMS
200 thru 800 VOLTS
MT1
G
MT2
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| MAC210A4FP | ISOLATED TRIACs THYRISTORS 10 AMPERES RMS 200 thru 800 VOLTS |
| MAC210-10 | TRIACs 10 AMPERES RMS 200 thru 800 VOLTS |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAC210A10G | 功能描述:双向可控硅 THY 10A 800V TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| MAC210A4 | 制造商:ONS 功能描述:ON SEMICONDUCTOR S7D9B |
| MAC210A4FP | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:ISOLATED TRIACs THYRISTORS 10 AMPERES RMS 200 thru 800 VOLTS |
| MAC210A6 | 制造商:Motorola Inc 功能描述: |
| MAC210A6FP | 制造商:ONS 功能描述:ON SEMICONDUCTOR S7D9B, S7D9A |
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