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| 型号： | MAC8S |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| 中文描述： | 敏感的门双向硅双向晶闸管 |
| 文件页数： | 2/7页 |
| 文件大小： | 85K |
| 代理商： | MAC8S |
MAC8SD, MAC8SM, MAC8SN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
2.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
T
J
= 25
°
C
T
J
= 110
°
C
I
DRM
,
I
RRM
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note ) (I
TM
=
11A)
V
TM
1.85
V
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
I
GT
2.0
3.0
3.0
5.0
5.0
5.0
mA
Holding Current (V
D
= 12V, Gate Open, Initiating Current =
150mA)
I
H
3.0
10
mA
Latching Current (V
D
= 24V, I
G
= 5mA)
MT2(+), G(+)
MT2(), G()
MT2(+), G()
I
L
5.0
10
5.0
15
20
15
mA
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100 )
MT2(+), G(+)
MT2(+), G()
MT2(), G()
V
GT
0.45
0.45
0.45
0.62
0.60
0.65
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
V
D
= 400 V, I
TM
= 3.5 A, Commutating dv/dt = 10 V /sec,
Gate Open, T
J
= 110
°
C, f = 500 Hz, Snubber: C
S
= 0.01
F
,
R
S
=15 , See Figure 16.)
di/dt
(c)
8.0
10
A/ms
Critical Rate of Rise of Off-State Voltage
(V
D
= Rate V
DRM
, Exponential Waveform, R
GK
= 510 , T
J
= 110
°
C)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt
25
75
V/ s
相关PDF资料 |
PDF描述 |
|---|---|
| MAC8SDG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC8SMG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC8SNG | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC97 | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
| MAC97A4G | Sensitive Gate Triacs Silicon Bidirectional Thyristors |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAC8SD | 制造商:ON Semiconductor 功能描述:Thyristor TRIAC 400V 70A 3-Pin(3+Tab) TO-220AB Rail |
| MAC8SDG | 功能描述:双向可控硅 THY 8A 400V TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| MAC8SM | 功能描述:双向可控硅 THY 8A 600V TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| MAC8SMG | 功能描述:双向可控硅 双向可控硅 RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| MAC8SN | 功能描述:双向可控硅 THY 8A 800V TRIAC RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
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