参数资料
型号: MAC8SNG
厂商: ON SEMICONDUCTOR
元件分类: 晶闸管
英文描述: Sensitive Gate Triacs Silicon Bidirectional Thyristors
中文描述: 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
封装: CASE 221A-09, 3 PIN
文件页数: 6/7页
文件大小: 85K
代理商: MAC8SNG
MAC8SD, MAC8SM, MAC8SN
http://onsemi.com
6
Figure 13. Typical Exponential Static dv/dt Versus
Junction Temperature, MT2()
T
J
, Junction Temperature (
°
C)
S
RGK, GATEMT1 RESISTANCE (OHMS)
Figure 14. Typical Exponential Static dv/dt Versus
GateMT1 Resistance, MT2()
300
250
200
150
100100
300
500
700
900
1000
200
400
600
800
T
J
= 110
°
C
V
PK
= 400 V
600 V
800 V
R
G MT1
= 510
V
PK
= 400 V
600 V
800 V
100
105
110
200
150
100
50
350
300
250
S
(di/dt)
c
, CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
(
t
w
f =
1
2 t
w
(di/dt)
c
=
6f I
TM
1000
V
DRM
Figure 15. Critical Rate of Rise of
Commutating Voltage
1
5
10
15
20
25
30
100
10
1
110
°
C
90
°
C
100
°
C
V
PK
= 400 V
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
L
L
1N4007
200 V
+
MEASURE
I
CHARGE
CONTROL
CHARGE
TRIGGER
NON-POLAR
C
L
51
MT2
MT1
1N914
G
T
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
R
S
ADJUST FOR
di/dt
(c)
C
S
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