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参数资料
| 型号： | MADP-007167-12250T |
| 元件分类： | PIN二极管 |
| 英文描述： | SILICON, PIN DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE 1225, 5 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 183K |
| 代理商： | MADP-007167-12250T |
PIN Diode
π Quad Attenuator
MA4P290-1225T
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V2
2
Also Offering
RoHs Compliant
Equivalent Parts
Electrical Specifications @ 25 °C
Parameter
Condition
Typical
Max.
Unit
Reverse Current (IR)
Vr = 200 V
10
A
Capacitance (CT)
F = 1 MHz, V = 50 V
0.20
0.30
pF
Resistance (RS)
F = 100 MHz, I = 1 mA
85
Resistance (RS)
F = 100 MHz, I = 10 mA
11
16
Resistance (RS)
F = 100 MHz, I = 100mA
3
Minority Carrier Lifetime (TL)
IF = 10 mA
2.7
S
I Region Width
175
m
Parameter
Frequency Range
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
50 – 3,000 MHz
13 mA / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-2.8
Return Loss
50 – 3,000 MHz
13 mA / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-15
Attenuation
50 – 3,000 MHz
0 mA / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-36
Input IP3
50 – 3,000 MHz
0 V / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F1 = 1010 MHz, F2 = 1020 MHz
dBm
45
Input IP3
50 – 3,000 MHz
+ 10 V / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F1 = 1010 MHz, F2 = 1020 MHz
dBm
43.5
Input IP3
50 – 3,000 MHz
0 V / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F1 = 110 MHz, F2 = 120 MHz
dBm
43.5
Input IP3
50 – 3,000 MHz
+ 10 V / Series Diode
and 3.7 V Shunt 1 and 2 Bias
F1 = 110 MHz, F2 = 120 MHz
dBm
39
Settling Time
50 – 3,000 MHz
Within 1 dB of Final Attenuation Value
F = 1 GHz
uS
10
RF C.W. Incident
Power
50 – 3,000 MHz
0 – 20 V Series Diode Bias
and 3.7V Shunt 1 and 2 Bias
dBm
+ 20
Typical 50
SOT-25 RF Performance @ +25 °C using Wide Band RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
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