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information contained herein without notice.
SURMOUNTTM PIN Diodes:
RoHS
M/A-COM Products
Rev. V5
MADP-042XX5-13060 Series
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Specifications Subject to Change Without Notice.
Electrical Specifications @ TAMB = + 25 °C
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
MADP-042305-13060
MADP-042505-13060
Capacitance
CT
1,3
- 10V, 1 MHz 1
pF
0.14
0.22
0.28
0.40
Capacitance
CT
1,3
- 10 V, 1 GHz 1,3
pF
0.15
0.28
Capacitance
CT
1,3
- 40 V, 1 MHz 1
pF
0.13
0.22
0.27
0.40
Capacitance
CT
1,3
- 40 V, 1 GHz 1,3
pF
0.14
0.27
Resistance
RS
2,3
+ 20 mA, 1 GHz 2,3
W
1.32
0.83
Forward Voltage
VF
+ 10 mA
V
0.87
1.00
0.84
1.00
Reverse Leakage
Current
IR
-80V
uA
10
Input Third Order
Intercept Point
IIP3
F 1= 1000 MHz
F2 = 1010 MHz
Input Power = +20 dBm
I bias = + 20 mA
dBm
72
76
C.W. Thermal
Resistance
θ
°C/W
145
115
Lifetime
TL
+10 mA / -6 mA
( 50% - 90% V )
nS
180
210
Units
Resistance
RS
2,3
+ 50 mA, 1 GHz 2,3
W
1.18
0.76
Parameter
Symbol
Conditions
Min
Typ
Max
Min
Typ
Max
MADP-042405-13060
MADP-042905-13060
Capacitance
CT
1,3
- 10 V, 1 MHz 1
pF
0.61
0.75
0.06
0.18
Capacitance
CT
1,3
- 10 V, 1 GHz 1,3
pF
0.61
0.06
Capacitance
CT
1,3
- 40 V, 1 MHz 1
pF
0.57
0.75
0.06
0.18
Capacitance
CT
1,3
- 40 V, 1 GHz 1,3
pF
0.58
0.06
Resistance
RS
2,3
+ 20 mA, 1 GHz 2,3
W
0.62
3.14
Forward Voltage
VF
+ 10 mA
V
0.82
1.00
0.93
1.00
Reverse Leakage
Current
IR
-80V
uA
10
Input Third Order
Intercept Point
IIP3
F 1= 1000 MHz
F2 = 1010 MHz
Input Power = +20 dBm
I bias = + 20 mA
dBm
80
65
C.W. Thermal
Resistance
θ4
°C/W
100
185
Lifetime
TL
+10 mA / -6 mA
( 50% - 90% V )
nS
255
140
Units
Resistance
RS
2,3
+ 50 mA, 1 GHz 2,3
W
0.58
2.60
1.
Total capacitance, CT, is equivalent to the sum of junction capacitance ,CJ , and parasitic capacitance, Cpar.
2.
Series resistance RS is equivalent to the total diode resistance : RS = RJ ( Junction Resistance) + RC ( Ohmic Resistance)
3.
RS and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-1134 package.
4.
Theta (θ) is measured with the die mounted in an ODS-1134 package.