参数资料
型号: MADP-042508-13060G
元件分类: PIN二极管
英文描述: SILICON, PIN DIODE
封装: ROHS COMPLIANT PACKAGE-2
文件页数: 2/4页
文件大小: 148K
代理商: MADP-042508-13060G
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
SURMOUNTTM 8M PIN Diodes
RoHS Compliant
M/A-COM Products
Rev. V1
MADP-042XX8-13060 Series
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Specifications Subject to Change Without Notice.
Electrical Specifications @ TAMB = + 25 °C
Parameter
Symbol
Conditions
MADP-042308-13060 MADP-042508-13060
Typ
Max
Typ
Max
Capacitance
CT
1,3
- 10V, 1 MHz 1
pF
0.10
0.20
0.18
0.30
Capacitance
CT
1,3
- 10 V, 1 GHz 1,3
pF
0.10
0.19
Capacitance
CT
1,3
- 40 V, 1 MHz 1
pF
0.09
0.20
0.18
0.30
Capacitance
CT
1,3
- 40 V, 1 GHz 1,3
pF
0.10
0.18
Resistance
RS
2,3
+ 20 mA, 1 GHz 2,3
W
1.38
0.97
Resistance
RS
2,3
+ 50 mA, 1 GHz 2,3
W
1.18
0.87
Forward Voltage
VF
+ 10 mA
V
0.85
1.00
0.82
1.00
Reverse Leakage
Current
IR
-100V
A
10
Input Third Order
Intercept Point
IIP3
F 1= 1000 MHz
F2 = 1010 MHz
Input Power = +20 dBm
I bias = + 20 mA
dBm
73
77
C.W. Thermal Resistance
θ
°C/W
145
115
Lifetime
TL
+10 mA / -6 mA
( 50% - 90% V )
nS
280
310
Units
Parameter
Symbol
Conditions
Units
MADP-042408-13060
Typ.
Max
Typ
Max
Capacitance
CT
1,3
- 10 V, 1 MHz 1
pF
0.38
0.50
0.05
0.15
Capacitance
CT
1,3
- 10 V, 1 GHz 1,3
pF
0.39
0.05
Capacitance
CT
1,3
- 40 V, 1 MHz 1
pF
0.36
0.50
0.04
0.15
Capacitance
CT
1,3
- 40 V, 1 GHz 1,3
pF
0.37
0.05
Resistance
RS
2,3
+ 20 mA, 1 GHz 2,3
W
0.67
3.63
Resistance
RS
2,3
+ 50 mA, 1 GHz 2,3
W
0.61
3.02
Forward Voltage
VF
+ 10 mA
V
0.80
1.00
0.91
1.00
Reverse Leakage Current
IR
-100V
A
10
Input Third Order
Intercept Point
IIP3
F 1= 1000 MHz
F2 = 1010 MHz
Input Power = +20 dBm
I bias = + 20 mA
dBm
81
66
C.W. Thermal Resistance
θ4
°C/W
100
185
Lifetime
TL
+10 mA / -6 mA
( 50% - 90% V )
nS
380
230
MADP-042908-13060
1.
Total capacitance, CT, is equivalent to the sum of junction capacitance ,CJ , and parasitic capacitance, Cpar.
2.
Series resistance RS is equivalent to the total diode resistance : RS = RJ ( Junction Resistance) + RC ( Ohmic Resistance)
3.
RS and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-1134 package.
4.
Theta (θ) is measured with the die mounted in an ODS-1134 package.
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