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information contained herein without notice.
1
GaAs Solder Bump Flip Chip Schottky Diode
M/A-COM Products
Rev. V2
MADS-001317-1320AG
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Features
Low Series Resistance, 4
Low Capacitance, 45 fF
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Solderable Bump Die Attach
Description
M/A-COM’s MADS-001317-1320AG is a Gallium
Arsenide Flip-Chip Schottky diode with solder
bumps. These devices are fabricated on OMCVD
epitaxial wafers using a process designed for high
device uniformity and extremely low parasitics.
This device can be used up to 80 GHz. This diode
is fully passivated with silicon nitride and has an
additional layer of a polymer for scratch protection.
The protective coatings prevent damage to the
junction during handling and circuit attachment.
Applications
The high cutoff frequency of this device allows use
through millimeter wave frequencies. Typical Ap-
plications include single and double balanced mix-
ers in PCN transceivers, radios, police radar detec-
tors and automotive radar detectors.
Mounting Side with Solder Bumps
Parameters and Test Conditions
Symbol
Units
Min.
Typ.
Max.
Junction Capacitance at 0V at 1 MHz
Cj
pF
—
0.020
—
Total Capacitance at 0V at 1 MHz1
Ct
pF
.030
0.045
0.060
Dynamic Resistance at 9.5 - 10.5 mA
Rd
Ohms
—
4
7
Reverse Breakdown Voltage at 10 A
Vb
Volts
4.5
7
—
Forward Voltage at 1mA
Vf
Volts
.60
.70
.80
Electrical Specifications TA = 25°C
1. Total Capacitance is equivalent to the sum of junction capacitance (Cj) and parasitic capacitance (Cp).