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参数资料
| 型号： | MASMBJ2K5.0E3 |
| 厂商： | MICROSEMI CORP-IRELAND |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 2000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 306K |
| 代理商： | MASMBJ2K5.0E3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
___________________________________________________________________________________________________________________________________
RF01019 Rev A, November 2010
High Reliability Product Group
Page 3 of 4
ELECTRICAL CHARACTERISTICS @ 25oC
MICROSEMI
PART
NUMBER
BREAKDOWN
VOLTAGE
Minimum
VBR
BREAKDOWN
CURRENT
IBR
RATED
STANDOFF
VOLTAGE
VWM
MAX
STANDBY
CURRENT
ID @ VWM
MAX
CLAMPING
VOLTAGE
VC @ IPP
PEAK PULSE
CURRENT
IPP
TEMPERATURE
COEFFICIANT
of
VBR
αV(BR)
V
mA
V
A
V
A
% /
oC
MSMB(J)(G)2K3.0
MSMB(J)(G)2K3.3
MSMB(J)(G)2K4.0
MSMB(J)(G)2K4.5
MSMB(J)(G)2K5.0
4.3
4.6
5.0
5.4
5.9
50
3.0
3.3
4.0
4.5
5.0
1500
700
400
50
5
5.4
5.8
6.3
6.6
7.6
10
+0/-0.05
±0.025
±0.030
±0.040
+0.050
GRAPHS
GRAPHS Contd.
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