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参数资料
| 型号： | MASMBJ9.0CAE3 |
| 厂商： | MICROSEMI CORP-IRELAND |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 289K |
| 代理商： | MASMBJ9.0CAE3 |
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01000 Rev A, June 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MSMBJ5.0A thru MSMBJ170CA, e3
and MSMBG5.0A thru MSMBG170CA, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Optional up screening available by replacing the M prefix with MA, MX or MXL.
These
prefixes specify various screening and conformance inspection options based on
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.
Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to
MP6KE200CA
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices ava
ilable by adding an “e3” suffix
3σ lot norm screening performed on Standby Current ID
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T
2L, etc.
Protection from switching transients & induced RF
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
o
Class 1: MSMB5.0A to MSMB120CA
o
Class 2: MSMB5.0A to MSMB60CA
o
Class 3: MSMB5.0A to MSMB30CA
o
Class 4: MSMB5.0A to MSMB15CA
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
o
Class 1: MSMB5.0A to MSMB36CA
o
Class 2: MSMB5.0A to MSMB18CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 C: 600 watts
at 10/1000 μs (also see Figures 1, 2, and
3) with impulse repetition rate (duty factor) of 0.01 % or less
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 °C to +150 °C
Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted
on FR4 PC board (1oz Cu) with recommended footprint (see page 2)
Steady-State Power dissipation: 5 watts at TL = 25 C, or 1.38 watts at TA = 25 C when
mounted on FR4 PC board with recommended footprint (see page 2)
Forward Surge at 25 C: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)
Solder temperatures: 260 C for 10 s (maximum)
SURFACE MOUNT 600 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Available in both J-bend and Gull-wing terminations
- Selections for 5.0 to 170 V standoff voltages (VWM)
相关PDF资料 |
PDF描述 |
|---|---|
| MP6KE11CA | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MP6KE120ATR | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MP6KE170CAE3TR | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| MP6KE8.2A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| MSMBG10A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MASMBJSAC12 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 12VWM 19VC DO214AA |
| MASMBJSAC12E3 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 12VWM 19VC DO214AA 制造商:Microsemi Corporation 功能描述:TVS 500W UNIDIRECT DO-214AA |
| MASMBJSAC15 | 制造商:Microsemi Corporation 功能描述:TVS DIODE 15VWM 23.6VC DO214AA |
| MASMBJSAC15E3 | 功能描述:TVS DIODE 15VWM 23.6VC DO214AA 制造商:microsemi ire division 系列:军用，MIL-PRF-19500 包装:散装 零件状态:在售 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:15V 电压 - 击穿（最小值）:16.7V 电压 - 箝位（最大值）@ Ipp:23.6V 电流 - 峰值脉冲（10/1000μs）:20A 功率 - 峰值脉冲:500W 电源线路保护:无 应用:通用 不同频率时的电容:30pF @ 1MHz 工作温度:-65°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMBJ（DO-214AA） 标准包装:1 |
| MASMBJSAC18 | 制造商:Microsemi Corporation 功能描述:TVS 500W UNIDIRECT DO-214AA |
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