参数资料
型号: MASMCGLCE51A
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
封装: PLASTIC PACKAGE-2
文件页数: 3/4页
文件大小: 222K
代理商: MASMCGLCE51A
1500 WATT LOW CAPACITANCE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCGLCE6.5 thru SMCGLCE170A, e3
SMCJLCE6.5 thru SMCJLCE170A, e3
SMCGLCE/SMCJLCE,
e3
GRAPHS
P
PP
Peak
Pulse
Power
kW
Test wave form
parameterxs
tr = 10 μs
tp = 1000 μs
tp – Pulse Time – sec
FIGURE 2 PULSE WAVEFORM
FIGURE 1 PEAK PULSE POWER vs. PULSE TIME
T – Temperature –
oC
Peak
Pulse
Power
(P
PP
)or
C
u
rr
e
n
t(I
PP
)
in
percent
of
25
o C
rating
FIGURE 3 DERATING CURVE
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in Figure 5. In applications where random
high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a
low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating
than the TVS clamping voltage VC. The Microsemi recommended rectifier part number for the application in Figure 5 is the “SMBJLCR80” or
“SMBGLCR80” depending on the terminal configuration desired. If using two (2) low capacitance TVS devices in anti-parallel for bidirectional
applications, this added protective feature for both directions (including the reverse of each rectifier diode) is inherently provided in Figure 6. The
unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
FIGURE 4
FIGURE 5
FIGURE 6
TVS with internal low
Optional Unidirectional
Optional Bidirectional
capacitance rectifier diode
configuration (TVS and
configuration (two TVS
separate rectifier diode)
devices in anti-parallel)
Microsemi
Scottsdale Division
Page 3
in parallel)
Copyright
2009
2-11-2009 REV J
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关PDF资料
PDF描述
MASMCGLCE90ATRE3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
MASMCJLCE110ATR 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
MASMCJLCE20E3TR 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
MASMCJLCE45A 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
MASMCJLCE6.5TR 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
相关代理商/技术参数
参数描述
MASMCGLCE51AE3 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk
MASMCGLCE54A 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk
MASMCGLCE54AE3 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk
MASMCGLCE58A 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk
MASMCGLCE58AE3 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk