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参数资料
| 型号： | MAT-02AH |
| 厂商： | ANALOG DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件页数： | 1/12页 |
| 文件大小： | 264K |
| 代理商： | MAT-02AH |
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
Low Noise, Matched
Dual Monolithic Transistor
MAT02
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
FEATURES
Low Offset Voltage: 50
V max
Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/
√Hz max
High Gain (hFE): 500 min at IC = 1 mA
300 min at IC = 1
A
Excellent Log Conformance: rBE
0.3
Low Offset Voltage Drift: 0.1
V/ C max
Improved Direct Replacement for LM194/394
Available in Die Form
ORDERING GUIDE
1
VOS max
Temperature
Package
Model
(TA = +25 C)
Range
Option
MAT02AH
2
50
V
–55
°C to +125°C TO-78
MAT02EH
50
V
–55
°C to +125°C TO-78
MAT02FH
150
V
–55
°C to +125°C TO-78
NOTES
1Burn-in is available on commercial and industrial temperature range parts in
TO-can packages.
2For devices processed in total compliance to MIL-STD-883, add /883 after part
number. Consult factory for 883 data sheet.
ABSOLUTE MAXIMUM RATINGS
1
Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . . 40 V
Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . . 40 V
Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . . . 40 V
Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . . . 40 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Total Power Dissipation
Case Temperature
≤ 40°C2 . . . . . . . . . . . . . . . . . . . . .1.8 W
Ambient Temperature
≤ 70°C3 . . . . . . . . . . . . . . . .500 mW
Operating Temperature Range
MAT02A . . . . . . . . . . . . . . . . . . . . . . . . . . –55
°C to +125°C
MAT02E, F . . . . . . . . . . . . . . . . . . . . . . . . . –25
°C to +85°C
Operating Junction Temperature . . . . . . . . . . –55
°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . +300
°C
Junction Temperature . . . . . . . . . . . . . . . . . . –65
°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Rating applies to applications using heat sinking to control case temperature.
Derate linearly at 16.4 mW/
°C for case temperature above 40°C.
3Rating applies to applications not using a heat sinking; devices in free air only.
Derate linearly at 6.3 mW/
°C for ambient temperature above 70°C.
NOTE
Substrate is connected to case on TO-78 package. Sub-
strate is normally connected to the most negative circuit
potential, but can be floated.
PIN CONNECTION
TO-78
(H Suffix)
PRODUCT DESCRIPTION
The design of the MAT02 series of NPN dual monolithic tran-
sistors is optimized for very low noise, low drift, and low rBE.
Precision Monolithics’ exclusive Silicon Nitride “Triple-
Passivation” process stabilizes the critical device parameters
over wide ranges of temperature and elapsed time. Also, the high
current gain (hFE) of the MAT02 is maintained over a wide
range of collector current. Exceptional characteristics of the
MAT02 include offset voltage of 50
V max (A/E grades) and
150
V max F grade. Device performance is specified over the
full military temperature range as well as at 25
°C.
Input protection diodes are provided across the emitter-base
junctions to prevent degradation of the device characteristics
due to reverse-biased emitter current. The substrate is clamped
to the most negative emitter by the parasitic isolation junction
created by the protection diodes. This results in complete isola-
tion between the transistors.
The MAT02 should be used in any application where low noise
is a priority. The MAT02 can be used as an input stage to make
an amplifier with noise voltage of less than 1.0 nV/
√Hz at 100 Hz.
Other applications, such as log/antilog circuits, may use the ex-
cellent logging conformity of the MAT02. Typical bulk resis-
tance is only 0.3
to 0.4 . The MAT02 electrical charac-
teristics approach those of an ideal transistor when operated over
a collector current range of 1
A to 10 mA. For applications re-
quiring multiple devices see MAT04 Quad Matched Transistor
data sheet.
相关PDF资料 |
PDF描述 |
|---|---|
| MAT02BRC/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT02AH/883 | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT02BIEH | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT02BIFH | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT02EHZ | 20 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAT02AH/883C | 制造商:Rochester Electronics LLC 功能描述:LOW-NOISE DUAL- LEV.B - Bulk |
| MAT02BH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BH/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BIEH | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT02BRC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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