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参数资料
| 型号： | MAT-03AH/883 |
| 厂商： | ANALOG DEVICES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件页数： | 1/12页 |
| 文件大小： | 254K |
| 代理商： | MAT-03AH/883 |
REV. B
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which may result from its use. No license is granted by implication or
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MAT03
Low Noise, Matched
Dual PNP Transistor
FEATURES
Dual Matched PNP Transistor
Low Offset Voltage: 100
V max
Low Noise: 1 nV/
√Hz @ 1 kHz max
High Gain: 100 min
High Gain Bandwidth: 190 MHz typ
Tight Gain Matching: 3% max
Excellent Logarithmic Conformance: rBE
0.3
typ
Available in Die Form
PIN CONNECTION
TO-78
(H Suffix)
GENERAL DESCRIPTION
The MAT03 dual monolithic PNP transistor offers excellent
parametric matching and high frequency performance. Low
noise characteristics (1 nV/
√Hz max @ 1 kHz), high bandwidth
(190 MHz typical), and low offset voltage (100
V max), makes
the MAT03 an excellent choice for demanding preamplifier ap-
plications. Tight current gain matching (3% max mismatch) and
high current gain (100 min), over a wide range of collector cur-
rent, makes the MAT03 an excellent choice for current mirrors.
A low value of bulk resistance (typically 0.3
) also makes the
MAT03 an ideal component for applications requiring accurate
logarithmic conformance.
Each transistor is individually tested to data sheet specifications.
Device performance is guaranteed at 25
°C and over the extended
industrial and military temperature ranges. To insure the long-
term stability of the matching parameters, internal protection
diodes across the base-emitter junction clamp any reverse base-
emitter junction potential. This prevents a base-emitter break-
down condition which can result in degradation of gain and
matching performance due to excessive breakdown current.
相关PDF资料 |
PDF描述 |
|---|---|
| MAT03AH/883C | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-03AH | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT03AH/883 | 20 mA, 36 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT-04NBC | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MAT-04NBCG | 30 mA, 40 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAT03ARC/883C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MAT03EH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| MAT03EHZ | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| MAT03FH | 功能描述:IC TRANS DUAL MATCHED PNP TO78-6 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
| MAT03FH | 制造商:Analog Devices 功能描述:SEMICONDUCTORSLINEAR |
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